LIU William,NELSON S,HILL D G.Current gain collapse in microwave multi-finger HBTs operated at very high power densities[J].IEEE Transactions on Electron Devices,1993,40(11):1917-1927.
[2]
KUMAR T,CAHAY M,ROENKER K.Ensemble monte carlo analysis of self-heating effects in graded heterojunction bipo- lar transistors[J].J Appl Phys,1998,83(4):1869-1877.
[3]
KLAASSEN D B M,SLOTBOOM J W,DEGRAAFF H C.Unified apparent bandgap narrowing in n-and p-type Si[J]. Solid State Electronics,1992,35(2):125-127.
[4]
ALl F,GUPTA A.HEMTs and HBTs:devices,fabrication,and circuits [M].Boston:Artech House,1991:1-5.
[5]
RIEH J S,JOHNSON J,FURKAY S,et al.Structural dependence of thermal resistance of trench-isolated bipolar transistors [C]//IEEE Electron Devices Society.IEEE BCTM Tech Dig.Minneapolis:IEEE Electron Devices Society,2002:100- 103.
[6]
RINALDI N.Small-signal operation of semiconductor devices including self-heating,with application to thermal characteriza- tion and instability analysis[J].IEEE Transactions on Electron Devices,2001,48(2):323-331.
[7]
FOX R M,LEE S G,ZWEIDINGER D T.The effects of BJT self-heating on circuit behavior[J].IEEE Journal of Solid- State Circuits,1993,28(6):678-682.
[8]
JIN Dong-yue,ZHANG Wan-rong,XIE Hong-yun,et al.New expression of the thermal stability for RF power HBT[J]. Chinese Journal of Electron Devices,2006,29(4):1168-1171.
