WESTSTRATE M,SINHA S.Analysis of a low noiseamplifier with LC-ladder matching and capacitive shunt-Shunt feedback[C]∥AFRICON.Nairobi:IEEE,2009:1-6.
[4]
RARIS T,ELGHAMITI O,BEGUERET J B,et al.UWBLNAs using LC ladder and transformers for input matchingnetworks[C]∥IEEE International Conference onElectronics,Circuits and Systems.Nice:IEEE,2006:792-796.
[5]
CHIANG M C,LU S S,MENG C C,et al.Analysis,design and optimization of InGaP-GaAs HBT matchedimpedance wide-band amplifiers with multiple feedbackloops[J].IEEE J Solid-State Circuits,2002,37(6):694-701.
谢孟贤,古妮娜.SiGe半导体在微电子技术发展中的重要作用[J].微电子学,2008,38(1):35-43.XIE Meng-xian,GU Ni-na.Important function of SiGesemiconductor in technology development ofmicroelectronics[J].Microelectronics,2008,38(1):35-43.(in Chinese)
[9]
CRESSLER J D.SiGe HBT technology:a new contenderfor Si-based RF and microwave circuit applications[J].Microwave Theory and Techniques,1998,46(5):572-589.
[10]
LUDWIG R,BRETCHKO P.RF Circuit Design:Theoryand Applications[M].Beijing:Publishing House ofElectronics Industry,2002:461-511.
[11]
GRAY P R,MEYER R G.Analysis and design of analogintegrated circuit[M].4th ed.Beijing:HigherEducation Press,2005:699-730.
[12]
BRUCCOLERI F,KLUMPERINK E A M.Wide-bandCMOS low-noise amplifier exploiting thermal noisecanceling[J].IEEE J Solid-State Circuits,2004,39(2):275-282.
[13]
MIRVAKILI A,YAVARI M.A noise-canceling CMOSLNA Design for the upper band of UWB DS-CDMAreceivers[C]∥IEEE International Symposium on Circuitsand Systems.Taipei:IEEE,2009:217-220.
