l White P M, Rogers C G, Hetitt B S. Reliability of Ku-band GaAs power FET's under highly stressedRF operation. Proc IEEE 21st Int Rel Phys Symp, 1983. 297-301
[2]
2 Fukui H, Wemple S H, Irvin J C Reliability of power GaAs field effect transistors. IEEE TransElectron Devices, 1982, 29(3): 395-401
[3]
3 Canali C, Fautini F, Scorzoni A. Degradation mechanisms induced by high current density in Al-GateGaAs MESFETs. IEEE Trans Electron Devices, 1987, 34(2). 205-211
[4]
4 Sze S M. Physics of semiconductor devices. 2nd ed. New York: John Wiley & Sons, 1981
[5]
5 Rhoderick E H,Williams R H. Metal-Semiconductor contacts. 2nd edition. Oxford: Clarendon Press,1988
[6]
6 Ashok S, Boerego J M, Gutman R J. Electrical characteristics of GaAs MIS Schottky diodes.Solid-state Electronics, 1979, 22(4). 621 -631
[7]
7 Boerego J M, Gutmann R J, Ashok S. Richardson constant of Al- and An-GaAs Schottky barrier Diodes.Applied Physics Letters, 1977, 30(3). 169-172
[8]
8 Missous M, Rhederick E H. On the Richardson constant for aluminum/gallium arsenide Schottky diodes.J Appl Phys, 1991, 69(10): 7142-7145
[9]
9 Srivasava A K, Arora B M, Guha S. Measurrnent of richardson constant of GaAs Schottky barriers.Solid-state Electronics, 1981, 24(2): 185-191
[10]
10 Fukul H. Thermal resistance of GaAs field-effect transistor. Proc IEDM Tech Dig, 1980, 118-121
[11]
11 Srivastava A K, Arora B M. Effect of annealing on the richardson constant of Al-GaAs Schottky Diodes.Solid-state Electronics, 1981, 24(11). 1049-1052
[12]
12 Wada Y, Chino K Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium Anenide contacts. Solid-state Electronics, 1983, 26(6): 559-564
[13]
13 Kniffin M, Helms C R Study of the structure and properties of Ti/GaAs interface. J Vac Sci Technol,1987, A5(4). 1511 -1515
[14]
14 Canali C, Magistrali F, Paccagnella A. Degradation mechanisms in 2W MESFET. Quality andReliability Engineering International, 1991(7). 343-349
