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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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单晶与多晶NbSi2在1023K氧化行为的对比
, PP. 645-648
Keywords: NbSi2,氧化,单晶,粉化现象
Abstract:
选择NbSi2的单晶、放电等离子烧结(SPS)多晶和电弧熔炼多晶样品在1023K下氧化,研究了微裂纹、孔隙和晶界对NbSi2氧化行为的影响.结果表明,含有大量微裂纹的电弧熔炼多晶样品经3h氧化后完全粉化,而单晶和SPS样品经89h氧化亦未出现粉化.无论是单晶还是多晶样品,氧化产物均为Nb2O5和SiO2,生成的Nb2O5易剥落,样品的氧化动力学曲线均呈直线规律,证明NbSi2的氧化过程是一种本征无保护条件下氧元素与基体元素直接反应的过程.多晶样品的氧化速率明显高于单晶样品的氧化速率,分析表明晶界和孔隙相当于增加了氧化反应的有效面积,提出了相应模型.
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