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金属学报  2006 

溶胶-凝胶法制备的ZnO∶Al薄膜的微观结构及光学、电学性能

, PP. 505-510

Keywords: ZnO∶Al(AZO)薄膜,溶胶-凝胶法

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Abstract:

采用溶胶-凝胶法制备了ZnO∶Al(AZO)透明导电薄膜.通过X射线衍射(XRD)、紫外-可见分光光度计(UV-Vis)、扫描电镜(SEM)和电阻测量装置,考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响.结果表明,退火温度越高,多晶AZO薄膜的(001)晶面择优取向生长的趋势越强,并且随退火温度升高,薄膜的晶粒尺寸增大,透光率增加.薄膜晶体结构为纯ZnO的六角纤锌矿结构.在掺杂浓度1%(摩尔分数)、退火温度500℃及镀膜层数10的条件下,得到了电阻率为3.2×10-3Ω?cm、可见光区的平均透射率超过90%的AZO薄膜.

References

[1]  Nishino J, Kawarada T, Ohisho S, Saitoh H, Maruyama K, Kamata K. J Mater Sci Lett, 1997; 16: 629
[2]  Ritala M, Asikanen T, LeskelaM, Skarp J. Mater Res Soc Symp Proc, 1996; 426: 513
[3]  Wang R, King L L H, Sleight A W. J Mater Res, 1996; 11: 1659
[4]  Gupta V, Mansingh A. J Appl Phys, 1996; 80: 1063
[5]  Bertolotti M M, Laschena M V, Rossi M, Ferrari A, Qian L S, Quaranta F, Valentini A. J Mater Res, 1990; 5: 1929
[6]  Schuler T, Aegerter M A. Thin Solid Films, 1999; 351: 125
[7]  Hayamizu S, Tabata H, Tanaka H, Kawai T. J Appl Phys, 1996; 80: 787
[8]  Anna Selvan J A, Keppner H, Shah A. Mater Res Soc Symp Proc, 1996; 426: 497
[9]  Nakada T, Murakami N, Kunioka A. Mater Res Soc Symp Proc, 1996; 426: 411
[10]  Szyszka B, Jager S. J Non-Cryst Solids, 1997; 218: 74
[11]  Deschanvres J L, Bochu B, Joubert J C. J Phys, 1993; 3: 485
[12]  Messaoudi C, Sayah D, Abd-Lefdil M. Phys Status Solidi, 1995; 151: 93
[13]  Tokumoto M S, Smith A, Santilli C V, Pulcinelli S H, Elkaim E, Briois V. J Non-Cryst Solids, 2000; 273: 302
[14]  Tokumoto M S, Smith A, Santilli C V, Pulcinelli S H, Craievich A F, Elkaim E, Traverse A, Briois V. Thin Solid Films, 2002; 416: 284
[15]  Schuler T, Aegerter M A. Thin Solid Films, 1999; 351: 125
[16]  Tokumoto M S, Pulcinelli S H, Santilli C V, Craievich A F. J Non-Cryst Solids, 1999; 247: 176
[17]  Kamalasanan M N, Chandra S. Thin Solid Films, 1996; 288: 112
[18]  Lee J H, Park B O. Thin Solid Films, 2003; 426: 94
[19]  Jimenez G A E, Soto U J A. Sol Energy Mater Sol Cells, 1998; 52: 345
[20]  Valle G G, Hammer P, Pulcinelli S H, Santilli C V. J Eur Ceram Soc, 2004; 24: 1009
[21]  Silva R F, Zaniquelli M E D. J Non-Cryst Solids, 1999; 247: 248
[22]  Ohyama M, Kozuka H, Yoko T. Thin Solid Films, 1997; 306: 78
[23]  Talahashi Y, Kanamori M, Kondoh A, Minoura H, Ohya Y. Jpn J Appl Phys, 1994; 33: 6611
[24]  Sernelius B E, Berggren K F, Jin Z C, Hamberg I, Granqvist C G. Phys Rev, 1998; 37: 10244
[25]  Tang W, Cameron D C. Thin Solid Films, 1994; 238: 83
[26]  Nanto H, Minami T, Shooji S, Takata S. J Appl Phys, 1984; 55: 1029
[27]  Ohyama M, Kozuka H, Yoko T. J Ceram Soc Jpn, 1996; 104: 296
[28]  Nunes P, Fortunato E, Tonello P, Braz F, Vilarinho P, Martins R. Vacuum, 2002; 64: 281
[29]  Gray J. J Am Ceram Soc, 1954; 37: 534
[30]  Sukkar M H, Tuller H L. Adv Ceram, 1984; 55: 71
[31]  Ge C Q, Xia Z L, Guo A Y. Electron Components Mater, 2004; 23(9): 31 (葛春桥,夏志林,郭爱云.电子元件与材料,2004;23(9):31)
[32]  Tian M B, Liu D L. Manual of Membrane Science and Technology. Beijing: China Machine Press, 1991: 471 (田民波,刘德令.薄膜科学与技术手册,北京:机械工业出版 社,1991:471)
[33]  Major S, Banerjee A, Chopra K L. Thin Solid Films, 1984; 122: 31
[34]  Meng Y, Lin J, Liu J, Shen J, Jiang Y M, Yang X L, Zhang Z J. Photoelectron Technol, 2001; 21: 89 (孟扬,林剑,刘键,沈杰,蒋益明,杨锡良,章壮健. 光电子技术,2001;21:89)

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