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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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掺磷四面体非晶碳薄膜的电学性能
DOI: 10.3724/SP.J.1037.2009.00538, PP. 201-205
Keywords: 掺磷,四面体非晶碳,基底偏压,电导率,导电机制
Abstract:
采用过滤阴极真空电弧技术以PH3为掺杂源,施加0-200V基底负偏压,制备了掺磷四面体非晶碳(ta-C∶P)薄膜.利用X射线光电子能谱(XPS)和Raman光谱研究ta-C∶P薄膜的微观结构,通过测定变温电导率和电流-电压曲线,考察ta-C∶P薄膜的导电行为.结果表明,磷掺入增加了薄膜中sp2杂化碳原子含量和定域电子π/π*态的数量,提高了薄膜的导电能力,且以-80V得到的ta-C∶P薄膜导电性能最好.在293-573K范围内ta-C∶P薄膜中的载流子表现出跳跃式传导和热激活传导两种导电机制.电流--电压实验证明ta-C∶P薄膜为n型半导体材料.
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