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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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电迁移对Ni/Sn3.0Ag0.5Cu/Cu焊点界面反应的影响
DOI: 10.3724/SP.J.1037.2011.00601, PP. 321-328
Keywords: 电迁移,Ni/Sn3.0Ag0.5Cu/Cu,界面反应,金属间化合物
Abstract:
研究了温度为150℃,电流密度为5.0×103A/cm2的条件下电迁移对Ni/Sn3.0Ag0.5Cu/Cu焊点界面反应的影响.回流焊后在Sn3.0Ag0.5Cu/Ni和Sn3.0Ag0.5Cu/Cu的界面上均形成了(Cu,Ni)6Sn5型化合物.时效过程中界面化合物随时效时间增加而增厚,时效800h后两端的化合物并没有发生转变,仍为(Cu,Ni)6Sn5型.电流方向对Cu基板的消耗起着决定作用.当电子从基板端流向芯片端时,电流导致基板端Cu焊盘发生局部快速溶解,并导致裂纹在Sn3.0Ag0.5Cu/(Cu,Ni)6Sn5界面产生,溶解到钎料中的Cu原子在钎料中沿着电子运动的方向向阳极扩散,并与钎料中的Sn原子发生反应生成大量的Cu6Sn5化合物颗粒.当电子从芯片端流向基板端时,芯片端NiUBM层没有发生明显的溶解,在靠近阳极界面处的钎料中有少量的Cu6Sn5化合物颗粒生成,电迁移800h后焊点仍保持完好.电迁移过程中无论电子的运动方向如何,均促进了阳极界面处(Cu,Ni)6Sn5的生长,阳极界面IMC厚度明显大于阴极界面IMC的厚度.与Ni相比,当Cu作为阴极时焊点更容易在电迁移作用下失效.
| [1] | Tu K N, Gusak A M, Li M. J Appl Phys, 2003; 93: 1335
|
| [2] | He HW, Xu G C, Guo F. Acta Metall Sin, 2009; 45: 744
|
| [3] | (何洪文, 徐广臣, 郭 福. 金属学报, 2009; 45: 744)
|
| [4] | Gan H, Tu K N. J Appl Phys, 2005; 97: 063514
|
| [5] | Yang Q L, Shang J K. J Electron Mater, 2005; 34: 1363
|
| [6] | Lin Y H, Hu Y C, Tsai C M, Kao C R, Tu K N. Acta Mater, 2005; 53: 2029
|
| [7] | Lu Y D, He X Q, En Y F, Wang X, Zhuang Z Q. Acta Metall Sin, 2009; 45: 178
|
| [8] | (陆裕东, 何小琦, 恩云飞, 王歆, 庄志强. 金属学报, 2009; 45: 178)
|
| [9] | Zhang L Y, Ou S Q, Huang J, Tu K N, Gee S, Nguyen L. Appl Phys Lett, 2006; 88: 012106
|
| [10] | Hung Y M, Chen C M. J Electron Mater, 2008; 37: 887
|
| [11] | Hu Y C, Lin Y H, Kao C R, Tu K N. J Mater Res, 2003; 18: 2544
|
| [12] | Chen L D, Huang M L, Zhou S M. J Alloys Compd, 2010; 504: 535
|
| [13] | Zhang X F, Guo J D, Shang J K. J Mater Res, 2008; 23: 3370
|
| [14] | Zhang F, Li M, Chum C C, Tung C H. J Mater Res, 2003; 18: 1333
|
| [15] | Wang S J, Liu C Y. J Electron Mater, 2003; 32: 1303
|
| [16] | Wang S J, Liu C Y. J Electron Mater, 2006; 35: 1955
|
| [17] | Chen H T,Wang C Q, Yan C, Li M Y, Huang Y. J Electron Mater, 2007; 36: 26
|
| [18] | Hong K K, Ryu J B, Park C Y, Huh J Y. J Electron Mater, 2008; 37: 61
|
| [19] | Chang C W, Yang S C, Tu C T, Kao C R. J Electron Mater, 2007; 36: 1455
|
| [20] | Zhang X F, Guo J D, Shang J K. J Electron Mater, 2009; 38: 425
|
| [21] | Wu W H, Chung H L, Chen C N, Ho C E. J Electron Mater, 2009; 38: 2563
|
| [22] | Lee T Y, Tu K N, Frear D R. J Appl Phys, 2001; 90: 4502
|
| [23] | Harcuba P, Janecek M. J Electron Mater, 2010; 39: 2553
|
| [24] | Tsai J Y, Hu Y C, Tsai C M, Kao C R. J Electron Mater, 2003; 32: 1203
|
| [25] | Yeh E C C, Choi W J, Tu K N, Elenius P, Balkan H. Appl Phys Lett, 2002; 80: 580
|
| [26] | Ho P S, Kwok T. Rep Prog Phys, 1989; 52: 301
|
| [27] | Huang J R, Tsai C M, Lin Y W, Kao C R. J Mater Res, 2008; 23: 250
|
| [28] | Zeng K, Tu K N. Mater Sci Eng Rep, 2002; 38(2): 55
|
| [29] | Chen C, Tong H M, Tu K N. Annu Rev Mater Res, 2010; 40: 531
|
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