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金属学报  2012 

光电化学响应分析Ni201在中性溶液中形成表面钝化膜的半导体性质

DOI: 10.3724/SP.J.1037.2011.00765, PP. 971-976

Keywords: Ni201,钝化膜,Mott-Schottky曲线,光电化学响应,半导体性质

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Abstract:

应用光电化学响应法和Mott-Schottky曲线法,研究了Ni201在500℃空气中生成的氧化膜和在pH值为8.4的中性缓冲溶液中阳极氧化生成钝化膜的半导体性质,分析了Ni201表面钝化膜的结构和组成.Mott-Schottky曲线表明,Ni201在该中性溶液中生成钝化膜的平带电位约为0.40V,其在500℃空气中生成的氧化膜的平带电位约为0.15V,前者的载流子浓度约是后者的34倍.在中性缓冲溶液中生成钝化膜的光电流谱表明,Ni201的结构由内层NiO和外层Ni(OH)2构成,其带隙宽度分别为2.8和1.6eV.其中,具有晶体结构的内层NiO的带隙宽度与Ni201在500℃空气中生成的氧化膜的带隙宽度2.4eV相似.通过光电化学法和Mott-Schottky曲线建立Ni201表面钝化膜的电子能带结构模型,解释了其内层NiO和外层Ni(OH)$_{2}$同是p型半导体组成的钝化膜的半导体性质.

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