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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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高纯砷化镓单晶的制备及热处理
, PP. 154-161
Abstract:
本文报道了用水平三温区炉制备高纯砷化镓单晶的工艺和热处理对电学性质的影响。实验结果表明,经适当热处理后的砷化镓单晶的液氮电子迁移率达到了38500屋米~2/伏·秒。用Brooks-Herring公式算出浅施主浓度N_D和总受主浓度N_A并作图,发现能符合于我们早先提出的n型砷化镓的结构缺陷模型,从而对该模型提供了进一步的支持。最后,根据热处理时间对电学性质的影响,对热处理机理进行了初步分析。
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