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金属学报  1981 

金属薄膜的电迁移激活能

, PP. 635-642

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Abstract:

电迁移过程中试样内非平衡缺陷的积累使电阻增大,其电阻变化率为d(ΔR/R_0)/dt=cmj~2ρ~(3/2)Z_i~*eD_0/λ~(1/2)kTexp(-Q/kT)和d(ΔR/R_0/dt)=c_1mj~2ρ~(3/2)Z_i~*eD_0(2(T-T_e)+α(T-T_e)~2)~(1/2)/λ~(1/2)kTexp(-Q/kT)用此二式可精确确定金属薄膜的电迁移激活能。用第一式确定的Al-3.2%Cu合金薄膜的电迁移激活能Q=0.65±0.04eV;用第二式处理Hummel的实验结果,则纯Al薄膜的Q值与原作者一致。

References

[1]  Black, J. R., Proc. IEEE, 57 (1969) , 1587.
[2]  Blech, I. A. and Meieran, E. S., J. Appl. Phys., 40 (1969) , 485.
[3]  Berenbaum, L., J. Appl. Phys., 42 (1971) , 880.
[4]  Howard, J. K. and Ross, R. F., Appl. Phys. Lett., 18 (1971) , 344.
[5]  Rosenberg, R. and Berenbaum, L., Appl. Phys. Lett., 12 (1968) , 200.
[6]  Hummel, R. E., Dehoff, R. T. and Geier, H. J., J. Phys. Chem. Solids, 37 (1976) , 73.
[7]  d'Heurle, F. M. and Rosenberg, R., Physics of Thin Films, Vol, 7, Ed. by G. Hoss, M. H. Francombe, and R. W. Hoffman, Academic Press, New York, and London, 1973, p. 257.
[8]  Herzig, C. and Wiemann, W., Phys. Status Sotidi,(α) 26 (1974) , 459.
[9]  Agarwala, B, N., Attardo, M. J. and Ingraham, A. P., J. Appl. Phys., 41 (1970) , 3954.
[10]  Huntington, H. B. and Grone, A. R., J. Phys. Chem. Solids, 20 (1961) , 76.
[11]  Chaung, Y. S. and Huang, H. L. J. Appl. Phys., 47 (1976) , 1775.
[12]  Shine, M. C. and d' Heurle, F. M., IBM J. Res. Dev., 15 (1971) , 378.
[13]  d' Heurle, F. M., Ainslie, N. G., Gangulee, A. and Shine, M. C., J. Vac. Sci. Technol., 9(1972) , 289."

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