全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用：99美元
投递稿件

查看量下载量

相关文章

更多...
金属学报  1981 

超高压电子显微镜在金属材料性能研究中的应用

, PP. 307-351

Full-Text   Cite this paper   Add to My Lib

Abstract:

一、前言目前,电子显微镜作为研究材料性能的一个有力手段,正在开辟它独立的应用领域。这是因为电镜是能对原子排列、晶体微观结构、各种晶体缺陷进行观察的唯一手段。并且,还因为它能分析出包含缺陷的微区成分;有时,也能分析其状态。但是为了得到这样高分辨率的图象,使用目前100kV(或200kV)商品电镜时,允许观察

 References

[1]  Hirsch, P. B., Howie, A., Nicholson, R. B., Pashley, D. W. and Wehlan, M. J., 'Electron Microscopy of Thin Crystals', Butterworths,1965． p.24． ;西山善次,幸田成康编,金属電子顕微镜写真解說,丸善KK,1974,p.321．
[2]  Doran, D. G., Nucl. Eng. Design, 33 (1975) , 63．
[3]  Imura, T., Proc. 3rd Int. Conf. HVEM at Oxford (1973) , 'High Voltage Electron Microscohy', 1973, p. 179．
[4]  Wakashima, K., Fukamachi, M. and Nagakura, S., Jap. J. Appl. Phys., 8 (1969) , 1167． Wakashima, K., Nagakura, S. and Taoka, T., Acta Met., 20 (1972) 133．
[5]  竹山大郎,日本金属学会報,13(1974) ,591． 竹山大郎,電子顕微鏡,11(1976) ,21．
[6]  Taukahara, S., Kawakatsu, H. and Taoka, T., Proc. 2nd Int. Conf. HVEM at Stockholm,(1971) , Jern. Ann., 155 (1971) , 468．
[7]  Glacser, R. M., Proc. 3rd Int. Conf. HVEM at Oxford (1974) , p. 370．
[8]  Uchida, Y., Lehmpfull, G. and Fujimoto, F., Proc. 5ht Int. Conf. HVEM at Toulouse (1975) ,'microscopic electronque, a haute tension', 1975, p. 113．
[9]  渡辺伝郎,福原明,日本结晶学会誌,10(1968) ,255． 渡辺伝郎,日本金属学会報,14(1975) .481．
[10]  JEOL. Technical Rep. (柴富氏提供)
[11]  Nagata, F. and Fukuhara, A., Jap. J. Appl. Phys., 6 (1967) , 1233． Fukuhara, A. and Yanagisawa, A., Jap. J. Appl. Phys., 8(1969) , 1166．
[12]  JEOL. Technical Rep. (柴富氏提供)
[13]  Uyeda, R., Acta Cryst., A24 (1968) , 175． Watanabe, D., Uyeda, R. and Fukuhara, A., ibid, 580．
[14]  深見章,村上悟,電子顕微鏡,9(1974) ,4． Fukami, A. and Murakami, S., Proc. 30th Annie. Jap. Soc. EM at Takarazuka (1979) , J. Electron microscopy. 28 (1979) , Suppl., s41．
[15]  Goringe, M. J., Proc. 4th Int. Conf. HVEM at Toulouse (1975) , 'microscopic electronique a haute tension', p. 85．
[16]  Swann, P. R., Proc. 4th Int. Conf. HVEM at Toulouse (1975) , 'microscopic electronique a haute tension', 1975, p. 299． Swann, P. R., Proc. 9th Int. Cong. EM at Tronto (1978) , 'Electron Microscopy', 1978, Vol. Ⅲ, p. 319．
[17]  Bell, W. L, Proc. Workshop Conf, on Microscopy of Cluster Nuclei in Defected Crystals at Chalk River, (1971) , p. 111． Butler, E. P., Proc. 3rd Conf. HVEM at Oxford (1973) , 'High Voltage Electron Microscopy', p. 22．
[18]  Sakata, S. and Tanino, M., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , 'High Voltage Electron Microscopy', 1977, p. 159．
[19]  Osiecki, R. and Thomas, G., 29th Ann. Proc. of EMSA at Boston (1971) , p. 178．
[20]  Sakata, S. and Tanino, M., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , 'High Voltage Electron Microscopy', 1977, p. 159．
[21]  桐谷道雄,吉田直亮,電子顕微镜,10(1975) .95． 桐谷道雄,日本金属学会報,17(1978) ,646．
[22]  Kiritani, M., Yoshida, N., Tabata,. H. and Maehara, Y., J. Phys. Soc. Jap., 38 (1975) , 1677．
[23]  Kiritani, M., Proc. Int. Conf. Fund. Aspect of Rad. Damage in Metalt Gatlinburg (1975) , p. 695．
[24]  Yoshida, N. and Kiritani, M., J. Phys. Soc. Jap., 35 (1973) , 1418．
[25]  Kiritani, M. and Yoshida, N., J. Phys. Soc. Jap., 36 (1974) , 613． <
[26]  Crew, A. V. and Wall, J., Optik, 30 (1970) , 461． Cowley, J. M., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , 'High Voltage Electron Microscopy', p. 9．
[27]  Hashimoto, H., Pnoc. 5th Int. Cong. EM at Philadelphia (1962) B, p. 11． Hashimoto, H., Rcp. of JEOL (1968) , 'Application of Electron Microscopy', Part Ⅱ, p. 23．
[28]  Ishikawa, A. Morita, C., Hibino, M. and Maruse, S., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , 'High Voltage Electron Microscopy', p. 105．
[29]  Uyeda, R., Dupouy, G., Perrier, F., Ayroles, R.,and Bousguet, A., J. Eiectronmicrroscopy, 12 (1963) , 271．
[30]  Yamamoto, T., Tsuno, K. and Nishizawa, H., Proc. 33rd Ann. EMSA. at Las Vegas (1975) , p. 32． Yamamoto, T., Nishizawa, H. and Tsuno, K., J. Phys. D: Appl. Phys., 8 (1975) , L 113．
[31]  Ino, S., Ogawa, S., Taoka, T. and Akahori, H., Jap. J. Appl. Phys., 11 (1972) , 1859．
[32]  井村徹,藤田広志,電子顕微鏡,10(1975) ,59．
[33]  Makin, M. J., Phil. Mag., 18 (1968) , 637． Markin, M. J., Proc. 9th Int. Cong. EM at Tronto (1978) , 'Electron Microscopy', Vol. Ⅲ, p. 330．
[34]  井村徹,日本物理学会誌,25(1970) ,815．
[35]  Kiritani, M. and Yoshida, N., J. Phys. Soc. Jap. 36 (1974) , 613． Kiritani, M., Yoshida, N., Takata, H. and Maehara, Y., J. Phys. Soc. Jap. 38 (1975) , 1677． 桐谷道雄,吉田直亮,電子顕微鏡,10(1975) ,97． 桐谷道雄,日本金属学会報,17(1978) .646．
[36]  JEOL., JEM, 1000/1250．
[37]  Hirsch, P. B., Howic, A., Nicholson, R. B., Pashley, D. W. and Whelan, M. J., Electron Microscopy of Thin Crystals, Butterworths, 1965, p. 496．
[38]  Hashimoto, H., Howie, A. and Whelan, M. J., Phil. Mag., 5 (1960) , 967, Table A4． 2 Hashimoto, H., Howie, A. and Whelan, M. J., Proc. Roy. Soc. A 269 (1962) , 80．
[39]  Humphreys, C. J., Thomas, L. E., Lally, J. S. and Fisher, R. M., Phil. Mag., 23 (1971) , 87．
[40]  Humphrevs. C. J., Proc. 25th Annivcrsarv Meet. EMAG. INST. Physics. 1971． p. 12．
[41]  古林英一,铁鋼,58(1972) ,343．
[42]  Hashimoto, H., Pnoc. 5th Int. Cong. EM at Philadelphia (1962) B, p. 11． Hashimoto, H., Rcp. of JEOL (1968) , 'Application of Electron Microscopy', Part Ⅱ, p. 23．
[43]  Uyeda, R., Dupouy, G., Perrier, F., Ayroles, R.,and Bousguet, A., J. Eiectronmicrroscopy, 12 (1963) , 271．
[44]  Ino, S., Ogawa, S., Taoka, T. and Akahori, H., Jap. J. Appl. Phys., 11 (1972) , 1859．
[45]  Makin, M. J., Phil. Mag., 18 (1968) , 637． Markin, M. J., Proc. 9th Int. Cong. EM at Tronto (1978) , 'Electron Microscopy', Vol. Ⅲ, p. 330．
[46]  HVEM応用関综合報告1) Franks, A. and Halliday, J. S., Engineering, 192 (1961) , 94． 2) 上田良二,榊米一郎,科学,36(1966) ,114． 3) 藤田広志,日本金属学会会報,5(1966) ,85． 4) Cosslett, V. E., Phys Today, 21 (1968) , № 7, 23． 5) Hashimoto, H. JEOL Rep. on Application of Electron Microscopy, 1968, p. 23． 6) 井村徹,物性,(1969) ,567． 7) Taoka, T., Proc. 3rd Int. Symposium, (1960) at Dresden, DDR, 'Einstoffe in Wissenshalt und Technik', p. 589． 8) 田岡忠美,铁鋼,59(1973) ,988．9) Dupouy, G., Proc. 4th Int. Conf. HVEM at Toulouse (1975) , 'microscopic electronique a haute tension', p. 1． 10) 藤田広志,電子顕微鏡,12(1977) ,2． 11) 井村徹,電子顕微鏡,12(1977) .7． 12) Hirsch, P. B., Proc, 5th Int. Conf. HVEM, at. Kyoto (1977) , 'High Voltage Electron Microscopy', p. 21．
[47]  Kiritani, M. and Yoshida, N., J. Phys. Soc. Jap. 36 (1974) , 613． Kiritani, M., Yoshida, N., Takata, H. and Maehara, Y., J. Phys. Soc. Jap. 38 (1975) , 1677． 桐谷道雄,吉田直亮,電子顕微鏡,10(1975) ,97． 桐谷道雄,日本金属学会報,17(1978) .646．
[48]  Thomas, G., Proc. 9th Int. Cong. EM, at Tronto (1978) , 'Electron Microscopy', Vol. 3, p. 392．
[49]  Doran, D. G., Nucl. Eng. Design, 33 (1975) , 63．
[50]  Hashimoto, H., Tanaka, K., Kobayashi, K., Suito, E., Shimadzu, S. and Iwanaga, M., Proc. Int. Conf. on Magnetism and Crystallography, at Kyoto (1961) , Vol. Ⅱ, 'Electron and Neutron Diffraction', p. 170． Hashimoto, H., J. Appl. Phys., 35 (1964) , 277．
[51]  竹山大郎,日本金属学会報,13(1974) ,591． 竹山大郎,電子顕微鏡,11(1976) ,21．
[52]  Hirsch, P. B., Proc. Int. Conf. on Magnetism and Crystallography at Kyoto (1961) , J. Phys. Soc. Jap., 17 (1962) Suppl. B-Ⅱ, 143．
[53]  Glacser, R. M., Proc. 3rd Int. Conf. HVEM at Oxford (1974) , p. 370．
[54]  Fujita, H., Kawasaki, Y., Furubayashi, E., Kajiwara, S. and Taoka, T., Jap. J. Appl. Phys., 6 (1967) , 214．
[55]  渡辺伝郎,福原明,日本结晶学会誌,10(1968) ,255． 渡辺伝郎,日本金属学会報,14(1975) .481．
[56]  Kamiya, Y., J. Phys. Soc. Jap., 27 (1969) , 956．
[57]  Ploc, R. A., Rcp. of Atomic Energy of Canada Ltd., AECL-3904 1971, p. 1．
[58]  Nagata, F. and Fukuhara, A., Jap. J. Appl. Phys., 6 (1967) , 1233． Fukuhara, A. and Yanagisawa, A., Jap. J. Appl. Phys., 8(1969) , 1166．
[59]  Uyeda, R., Acta Cryst., A24 (1968) , 175． Watanabe, D., Uyeda, R. and Fukuhara, A., ibid, 580．
[60]  Uyeda, R. and Nonoyama, M., Jap. J. Appl. Phys., 6 (1967) , 557． Uyeda, R. and Nonoyama, M., ibid., 7 (1968) , 200．
[61]  Goringe, M. J., Proc. 4th Int. Conf. HVEM at Toulouse (1975) , 'microscopic electronique a haute tension', p. 85．
[62]  Thomas, G., Phil. Mag., 17 (1968) , 1097．
[63]  Bell, W. L, Proc. Workshop Conf, on Microscopy of Cluster Nuclei in Defected Crystals at Chalk River, (1971) , p. 111． Butler, E. P., Proc. 3rd Conf. HVEM at Oxford (1973) , 'High Voltage Electron Microscopy', p. 22．
[64]  Fujita, H., Tabata, T., Yoshide, K., Sumida, N. and Katagiri, S., Jap. J. Appl. Phys., 11 (1972) , 1522．
[65]  Osiecki, R. and Thomas, G., 29th Ann. Proc. of EMSA at Boston (1971) , p. 178．
[66]  Watanabe, H., Fukuhara, A. and Kora, K., Proc. Int. Conf. Magnetism and Crystallography (1961) at Kyoto, J. Phys. Soc. Jap., 17 (1962) , Suppl. B-Ⅱ, 195． Uyeda, R., ibid., 155． 神谷芳弘,J. Electron Microscopy, 19 (1970) , 245．
[67]  Hashimoto, H., Proc. 2nd Int. Conf. HVEM at Stockholm (1971) , Jern. Ann. 155 (1971) , 479．
[68]  Fujiwara, K., J. Phys. Soc. Jap., 16 (1961) , 2226．
[69]  Yamamoto, T., Nishizawa, H., Uchida, U., Shibatomi, K. and Taoka, T., JEOL News, 10e (1972) , № 3, 10．
[70]  Cockayne, D. J. H., Ray, I. L, F. and Whelan, M. J., Phil. Mag. 20 (1969) , 1265．
[71]  JEOL., JEM, 1000/1250．
[72]  Crew, A. V., Proc. 9th Int. Cong. EM at Tronto (1978) , 'Electron Microscopy', 1978, Vol. Ⅲ, p. 197． 小池紘民,日本電子顕微鏡学会報,1,73,№ 6,82．
[73]  Hirsch, P. B., Howic, A., Nicholson, R. B., Pashley, D. W. and Whelan, M. J., Electron Microscopy of Thin Crystals, Butterworths, 1965, p. 496．
[74]  Zeitler, E. and Crew, A. V., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , p. 99．
[75]  Hashimoto, H., Howie, A. and Whelan, M. J., Phil. Mag., 5 (1960) , 967, Table A4． 2 Hashimoto, H., Howie, A. and Whelan, M. J., Proc. Roy. Soc. A 269 (1962) , 80．
[76]  Strojinik, A., Cosslett, V. E. and Sparrow, T. G., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , p. 103．
[77]  Humphreys, C. J., Thomas, L. E., Lally, J. S. and Fisher, R. M., Phil. Mag., 23 (1971) , 87．
[78]  Coeley, I. M., Appl. Phys. Lett., 15 (1969) , 58．
[79]  Humphrevs. C. J., Proc. 25th Annivcrsarv Meet. EMAG. INST. Physics. 1971． p. 12．
[80]  Yamamoto, T., Nishizawa, H. and Shibatomi, K., Proc. 8th Int. Cong. EM at Canberra, (1974) , Electron Microscopy, Vol. 1, p. 286． Yamamoto, T. and Nishizawa, H., JEOL News, 12e (1974) , № 2, p. 19．
[81]  古林英一,铁鋼,58(1972) ,343．
[82]  桐谷道雄,吉田直亮,電子顕微镜,10(1975) .95． 桐谷道雄,日本金属学会報,17(1978) ,646．
[83]  Hashimoto, H., Proc. 2nd Int. Conf. HVEM at Stockholm (1971) , Jern. Ann. 155 (1971) , 479．
[84]  Kiritani, M., Yoshida, N., Tabata,. H. and Maehara, Y., J. Phys. Soc. Jap., 38 (1975) , 1677．
[85]  Yamamoto, T., Nishizawa, H., Uchida, U., Shibatomi, K. and Taoka, T., JEOL News, 10e (1972) , № 3, 10．
[86]  Kiritani, M., Proc. Int. Conf. Fund. Aspect of Rad. Damage in Metalt Gatlinburg (1975) , p. 695．
[87]  Cockayne, D. J. H., Ray, I. L, F. and Whelan, M. J., Phil. Mag. 20 (1969) , 1265．
[88]  Yoshida, N. and Kiritani, M., J. Phys. Soc. Jap., 35 (1973) , 1418．
[89]  Crew, A. V., Proc. 9th Int. Cong. EM at Tronto (1978) , 'Electron Microscopy', 1978, Vol. Ⅲ, p. 197． 小池紘民,日本電子顕微鏡学会報,1,73,№ 6,82．
[90]  Kiritani, M. and Yoshida, N., J. Phys. Soc. Jap., 36 (1974) , 613． <
[91]  Zeitler, E. and Crew, A. V., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , p. 99．
[92]  Strojinik, A., Cosslett, V. E. and Sparrow, T. G., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , p. 103．
[93]  Coeley, I. M., Appl. Phys. Lett., 15 (1969) , 58．
[94]  Yamamoto, T., Nishizawa, H. and Shibatomi, K., Proc. 8th Int. Cong. EM at Canberra, (1974) , Electron Microscopy, Vol. 1, p. 286． Yamamoto, T. and Nishizawa, H., JEOL News, 12e (1974) , № 2, p. 19．
[95]  Crew, A. V. and Wall, J., Optik, 30 (1970) , 461． Cowley, J. M., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , 'High Voltage Electron Microscopy', p. 9．
[96]  Ishikawa, A. Morita, C., Hibino, M. and Maruse, S., Proc. 5th Int. Conf. HVEM at Kyoto (1977) , 'High Voltage Electron Microscopy', p. 105．
[97]  Yamamoto, T., Tsuno, K. and Nishizawa, H., Proc. 33rd Ann. EMSA. at Las Vegas (1975) , p. 32． Yamamoto, T., Nishizawa, H. and Tsuno, K., J. Phys. D: Appl. Phys., 8 (1975) , L 113．
[98]  井村徹,藤田広志,電子顕微鏡,10(1975) ,59．
[99]  井村徹,日本物理学会誌,25(1970) ,815．
[100]  Hirsch, P. B., Howie, A., Nicholson, R. B., Pashley, D. W. and Wehlan, M. J., 'Electron Microscopy of Thin Crystals', Butterworths,1965． p.24． ;西山善次,幸田成康编,金属電子顕微镜写真解說,丸善KK,1974,p.321．
[101]  Imura, T., Proc. 3rd Int. Conf. HVEM at Oxford (1973) , 'High Voltage Electron Microscohy', 1973, p. 179．
[102]  Wakashima, K., Fukamachi, M. and Nagakura, S., Jap. J. Appl. Phys., 8 (1969) , 1167． Wakashima, K., Nagakura, S. and Taoka, T., Acta Met., 20 (1972) 133．
[103]  Taukahara, S., Kawakatsu, H. and Taoka, T., Proc. 2nd Int. Conf. HVEM at Stockholm,(1971) , Jern. Ann., 155 (1971) , 468．
[104]  Uchida, Y., Lehmpfull, G. and Fujimoto, F., Proc. 5ht Int. Conf. HVEM at Toulouse (1975) ,'microscopic electronque, a haute tension', 1975, p. 113．
[105]  JEOL. Technical Rep. (柴富氏提供)
[106]  JEOL. Technical Rep. (柴富氏提供)
[107]  深見章,村上悟,電子顕微鏡,9(1974) ,4． Fukami, A. and Murakami, S., Proc. 30th Annie. Jap. Soc. EM at Takarazuka (1979) , J. Electron microscopy. 28 (1979) , Suppl., s41．
[108]  Swann, P. R., Proc. 4th Int. Conf. HVEM at Toulouse (1975) , 'microscopic electronique a haute tension', 1975, p. 299． Swann, P. R., Proc. 9th Int. Cong. EM at Tronto (1978) , 'Electron Microscopy', 1978, Vol. Ⅲ, p. 319．

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133