OALib Journal期刊
ISSN: 2333-9721
费用:99美元
|
|
|
GaAs中空穴陷阱A,B能级的热力学性质
, PP. 59-63
Keywords: GaAs,空穴陷阱,热力学性质
Abstract:
从GaAs中空穴陷阱A,B能级的结构缺陷模型与该二陷阱浓度和外延温度的关系导出了生成反应Ga_(As)As_(Ga)+(V_(Ga))_2~-+e~-=As_(Ga)V_(Ga)~-+Ga_(As)V_(Ga)~-的平衡常数K_T和生成自由能ΔG°,本研究成果可望在实际生产中获得应用。
References
[1] | 1 邹元燨.全国微波技术会议,石家庄,1974
|
[2] | 2 Long D V, Logan R A. J Electron Mater, 1975; 4: 1053
|
[3] | 3 邹元燨.见:全国砷化镓及其它Ⅲ-Ⅴ族化合物半导体会议文集,柳州,1977:48
|
[4] | 4 Zhou Jicheng, Luo Yian, Li Liansheng, Lu Bingfang, Zhang Jue. Mater Lett, 1987; 5: 479
|
[5] | 5 Zhou Jicheng, Li Liansheng, Liu Miaoxiu, Lu Bingfang, Zhang Jue. Mater Lett, 1987; 6: 247
|
[6] | 6 Zhou Jicheng, Luo Yian, Lu Bingfang, Zhan Qianbao. Mater Lett, 1988; 7: 391
|
[7] | 7 Tegude F J, Baston J, Arnold N, Heime K. In: Persented at 2nd conf on Si Ⅲ-Ⅴ Materials, Evian, France, 1982
|
[8] | 8 Chiang S Y, Pcarson G L. J Appl Phys, 1975; 46: 2986
|
[9] | 9 Zou Y, Zhou J, Lu Y, Wang G, Hu B, Li C, Li L, Shao J, Sheng C. J Electron Mater, 1985; 14A: 1021
|
[10] | 10 Zhou Jicheng, Fu Zhiping, Zhan Qianbao, Feng Shuifu. In: Swaminathan V, Manasreh O, Pearton S J eds., Proc MRS Spring Meeting, Vol. 184, Pittsburgh, PA: Materials Research Society, 1990: 68
|
[11] | 11 李爱珍,潘慧珍,杨倩志,唐嫱妹,邱建华,曹自立,陈国建.见:全国砷化镓及其它Ⅲ-Ⅴ族化合物半导体会议文集,柳州,1977:54
|
Full-Text
|
|
Contact Us
service@oalib.com QQ:3279437679 
WhatsApp +8615387084133
|
|