OALib Journal期刊
ISSN: 2333-9721
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单晶硅压痕裂纹的氢致滞后扩展
, PP. 173-177
Keywords: 单晶硅,应力腐蚀,氢致开裂,压痕裂纹
Abstract:
利用压痕裂纹恒载荷试样,研究了单晶硅在空气中应力腐蚀以及动态充氢时氢致滞后开裂的可能性;利用卸载的压痕裂纹试样研究了残余应力引起氢致滞后开裂的可能性.结果表明,单晶硅压痕裂纹恒载荷试样当$K_\rmI=$K_\rmIC时在空气中并不发生应力腐蚀.在H$_2SO$_4溶液中动态充氢,则能发生氢致滞后开裂,止裂时归一化门槛应力强度因子为$K_\rmIH/K_\rmIC$\approx$0.9.卸载压痕裂纹的残余应力在充氢过程中也能引起氢致滞后开裂,归一化门槛应力强度因子为$K_\rmIH/K_\rmIC$\approx$0.9.
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