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金属学报  1999 

柔性基片上In2O3:Sn和ZnO:Al薄膜的制备及其电学和光学特性

, PP. 443-448

Keywords: 柔性基片,光学能隙,半导体薄膜,制备

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Abstract:

利用直流磁控反应溅射铟锡合金靶和锌合金钯,在软基片上低温沉积了In2O3Sn(ITO)和ZnOAl(ZAO)透明电薄膜.结果表明,ITO和ZAO薄膜均出现晶格畸变;柔性基片上低温沉积薄膜的电阻率对氧分压的依赖性远低于硅和玻璃衬底;尺度效应对薄膜电阻率有重要的影响.

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