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金属学报 1999

HFCVD生长金刚石薄膜中气体状态参数空间场模拟计算

, PP. 648-653

宋贵宏,孙超,黄荣芳,闻立时

Keywords: 金刚石薄膜,均匀生长,空间场,模拟计算

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Abstract:

本文对ＨＦＣＶＤ过程中的气体状态参数空间场进行了模拟计算,结果表明,气体的温度,体密度,速度和质量流密度场是空间位置的函数,在合适的位置,可获得均匀的温度和质量流密度,这些结果可为制备大面积均匀金刚石薄膜时工艺参数选择提供理论依据.

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