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金属学报  2003 

电子束诱导非晶GaAs晶化的形核与长大

, PP. 13-16

Keywords: 非晶GaAs,电子束辐照,结晶

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Abstract:

利用高分辨电子显微镜对电子束辐照诱发非晶GaAs晶化过程现象进行了原位观察.结果表明,具有几个原子大小的原子簇在辐照初期产生,并作为晶化的核心在随后的辐照过程中不断长大;大部分结晶晶粒保持相同的晶体取向,其余少量不同取向的晶粒也与前者保持孪晶关系.电子束辐照诱发非晶GaAs晶化的速率与电子束流密度有关;电子速辐照非晶GaAs结晶不是电子束诱发材料湿度升高的结果,而与电子能量有关.本文对辐照晶化的机制和结晶过程进行了讨论.

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