OALib Journal期刊
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插入Bi层对NiFe/Cu/NiFe/FeMn自旋阀多层膜交换耦合的影响
, PP. 617-620
Keywords: 层间偏聚,交换耦合场,表面活化原子Bi,XPS
Abstract:
对于Ta/NiFe/Cu/NiFe/FeMn/Ta自旋阀多层膜,Cu原子偏聚到NiFe/FeMn界面将导致自旋阀多层膜中NiFe/FeMn的交换耦合场Hex下降.然而,少量的表面活化原子Bi被沉积到Cu层和被钉扎NiFe层之间,Cu原子在NiFe/FeMn界面的偏聚可以被抑制;而且,更重要的是Ta/NiFe/Cu/NiFe/FeMn/Ta自旋阀多层膜中的交换耦合场Hex可以被有效地提高.
References
[1] | MMeiklejohn W H, Bean C P. Phys Rev, 1956; 102B: 1423
|
[2] | DDieny B, Speriosu V S, Parkin S S P, Gurney B A, WilhojtD R, Mauri D. Phys Rev, 1991; 43B: 129
|
[3] | Jungblut R, Coehoorn R, Johnson M T, Stegge J A D,Reinders A. J Appl Phys, 1994; 75: 6659
|
[4] | NNogues J, Ledermn D, Moran T J, Schuller I. Phys RevLett, 1997; 76: 4624
|
[5] | KKoon N C. Phys Rev Lett, 1997; 78 : 4865
|
[6] | SSchulthess T C, Butler W H.Phys Rev Lett,1998;81:4516
|
[7] | NNogues J, Ledermn D, Moran T J, Schuller I K, Rao K V.Appl Phys Lett, 1996; 68: 3186
|
[8] | Hwang D G, Lee S S, Park C M. Appl Phys Lett, 1998;72: 2162
|
[9] | QQian Z H, Sivertsen J M, Judy J H. J Appl Phys, 1998;83: 6825
|
[10] | Choe G, Gupta S. Appl Phys Lett, 1997; 70: 1764
|
[11] | Takano K, Kodama R H, Berkowitz A E, Cao W, ThomasG. Phys Rev Lett, 1997; 79: 1130
|
[12] | Yu G H, Chai C L, Zhu F W, Xiao J M, Lai W Y. ApplPhys Lett, 2001; 78: 1706
|
[13] | Malozemoff A P. Phys Rev, 1987; 35B: 3679
|
[14] | Mauri D, Kay E, Scholl D, Kay E. J Appl Phys, 1987; 62:3047
|
[15] | Fujikata J, Hayashi K, Yamamoto H, Nakada M. J ApplPhys, 1998; 83:7210
|
[16] | Kim Y K, Ha K, Rea L L. IEEE Trans Magn, 1995; 31:3823
|
[17] | Nishioka K, Gangopadhyay S, Fujiwara H. IEEE TransMagn, 1995; 31: 3949
|
[18] | Dieny B, Speriosu V S, Metin S. J Appl Phys, 1991; 69:4774
|
[19] | Kanai H, Kane J, Aoshima Kanamine M, Uehara Y. IEEETrans Magn, 1995; 31: 2612
|
[20] | Yu G H, Li M H, Zhu F W, Li Q K, Zhang Y, Cai C L,Jiang H W, Lai W Y. J Appl Phys, 2002; 91: 3759
|
[21] | Mezey, L Z, Giber J. Jap J Appl Phys, 1982; 21:1569
|
[22] | Chopra H D, Repetski E J, Brown H J, Chen P J,
|
[23] | Swartzendruber L J, Egelhoff JR W F. Ada mater, 2000; 48: 3501
|
[24] | Egelhoff Jr W F,Chen P J,Powell C J,Stiles M D, McMichael R D. J Appl Phys, 1996; 79: 2491
|
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