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OALib Journal期刊
ISSN: 2333-9721
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C掺杂对Al中He行为的影响
DOI: DOI:10.3724/SP.J.1037.2009.00590, PP. 318-323
Keywords: Al,C掺杂,He行为,鼓泡,微观结构
Abstract:
用离子注入技术实现了Al表面C元素的掺杂,并利用XPS,XRD,TEM和SEM研究了C掺杂对Al中离子注入He行为的影响.结果表明,掺杂的C在Al表面形成了Al4C3,随着C掺杂量的增加,Al表面组织的择优取向和晶胞体积发生改变,从而影响了Al中的He离子注入行为.预先掺杂的C对He离子注入Al表面的鼓泡行为有重要影响,其影响程度与掺杂剂量有关.小剂量C掺杂后,能有效抑制鼓泡的长大,并使Al表面鼓泡均匀分布;更高剂量C掺杂后,C对表面鼓泡的抑制作用减弱,甚至加剧He离子的辐照损伤,Al表面出现孔洞和剥落现象.掺杂的C对Al基体的微观结构也有很大影响.
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