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OALib Journal期刊
ISSN: 2333-9721
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Si中30o部分位错和单空位相互作用的分子动力学模拟
, PP. 400-404
Keywords: Si,30o部分位错,单空位,分子动力学,弯结
Abstract:
利用基于Stillinger--Weber(SW)势函数的分子动力学方法分析了Si中30o部分位错和单空位(V1)的相互作用.不同温度、剪应力作用下的计算结果表明,在温度恒定条件下,剪应力较小时,V1对位错有钉扎作用;当施加的剪应力达到临界剪应力时,位错脱离V1的钉扎继续运动,并且将V1遗留在晶体中;随温度的升高,临界剪应力近似线性下降.通过不含V1和含有V1的模型中位错芯位置的对比后发现,V1对滑过它的30o部分位错有明显的加速作用.
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