OALib Journal期刊
ISSN: 2333-9721
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Ni-P消耗对焊点电迁移失效机理的影响
DOI: 10.3724/SP.J.1037.2012.00401, PP. 81-86
Keywords: 电迁移,化学镀Ni-P,界面反应,金属间化合物,失效
Abstract:
研究了Cu/Sn/Ni--P线性焊点在150和200℃,电流密度1.0×104A/cm2的条件下化学镀Ni--P层消耗及其对焊点失效机理的影响.结果表明,在Ni-P层完全消耗之前,阴极界面的变化表现为伴随着Ni--P层的消耗,在Sn/Ni-P界面上生成Ni2SnP和Ni3P;从Ni-P层中扩散到钎料中的Ni原子在钎料中以(Cu,Ni)6Sn5或(Ni,Cu)3Sn4类型的IMC析出,仅有很少量的Ni原子能扩散到对面的Cu/Sn阳极界面.当Ni--P层完全消耗后,阴极界面的变化主要表现为空洞在Sn/Ni2SnP界面形成,Ni3P逐渐转变为Ni2SnP,空洞进一步展形成裂缝,从而导致通过焊点的实际电流密度升高、产生的Joule热增加,最终导致焊点发生高温电迁移熔断失效.
References
[1] | Chen C, Tong H M, Tu K N.Annu Rev Mater Res, 2010; 40: 531
|
[2] | Chan Y C, Yang D.Prog Mater Sci, 2010; 55: 428
|
[3] | Zeng G, Xue S B, Zhang L, Gao L L, Dai W, Luo J D.J Mater Sci: Mater Electron, 2010; 21: 421
|
[4] | Kumar A, He M, Chen Z, Teo P S.Thin Solid Films, 2004; 462--463: 4138
|
[5] | Huang M L, Ye S, Zhao N.J Mater Res, 2011; 26: 3009
|
[6] | Huang M L, Zhou S M, Chen L D.J Electron Mater, 2012; 41: 730
|
[7] | Chen L D, Huang M L, Zhou S M. In: Scott N ed.,Proceedings IEEE 60th Electronic Components and Technology Conference (ECTC 2010), Las Vegas, 2010: 176
|
[8] | Chang C W, Yang S C, Tu C T, Kao C R.J Electron Mater, 2007; 36: 1455
|
[9] | Saunders N, Miodownik A P.Alloy Phase Diagrams, 1990; 11: 278
|
[10] | Lu C T, Tseng H W, Chang C H, Huang T S, Liu C Y.Appl Phys Lett, 2010; 96: 232103
|
[11] | Yang Q L, Shang P J, Guo J D, Liu Z Q, Shang J K.J Mater Res, 2009; 24: 2767
|
[12] | Dyson B F, Anthony T R, Turnbull D.J Appl Phys, 1967; 38: 3408
|
[13] | Lin Y H, Hu Y C, Tsai C M, Kao C R, Tu K N.Acta Mater, 2005; 53: 2029
|
[14] | Tsai J Y, Hu Y C, Tsai C M, Kao C R.J Electron Mater, 2003; 32: 1203
|
[15] | Huang M L, Kang N, Huang Y Z.J Mater Sci Technol, 2012; 28(in press)
|
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