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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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强磁场作用时间对氧化法制备的Co掺杂ZnO薄膜微观结构和光学性能的影响
DOI: 10.11900/0412.1961.2014.00376, PP. 1538-1542
Keywords: ZnO薄膜,Zn氧化,透光率,强磁场,真空蒸发
Abstract:
利用FESEM,XRD和紫外可见分光光度计研究了强磁场作用时间对真空蒸发氧化法制备的Co掺杂ZnO薄膜微观结构和光学性能的影响.结果表明强磁场抑制了ZnO珊瑚枝状形貌的生长,氧化60min时,无磁场下生长成球状颗粒,而6T磁场下则生长成片状组织.强磁场作用时间的增加会使薄膜的择优生长从(101)变成(002);影响磁性Co原子在ZnO中的分布;薄膜的禁带宽度降低到2.95~3.13eV的范围内.另外,无磁场时氧化时间的增加会降低薄膜的透光率,而强磁场下氧化时间的增加会提高透光率.这些研究结果为ZnO薄膜表面形貌、择优生长、磁性原子分布、透光率和禁带宽度等微观结构和光学性能的调控提供了一种新方法.
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