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化学进展  2010 

非线性光学晶体CdGeAs2点缺陷的研究*

, PP. 315-321

Keywords: CdGeAs2晶体,点缺陷,光致发光,密度泛函理论

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Abstract:

CdGeAs2晶体是在红外频率转换应用中前景很广泛的非线性光学材料。点缺陷的存在引起了CdGeAs2晶体在5.5μm处的吸收,从而阻碍了其应用发展。本文综述了CdGeAs2晶体点缺陷的研究进展。利用光学吸收、光致发光、霍尔效应和电子顺磁共振等技术研究了CdGeAs2晶体的点缺陷;并利用原子模拟技术和密度泛函理论方法计算了CdGeAs2晶体的点缺陷;最后,展望了CdGeAs2晶体点缺陷今后重点开展的研究方向。

References

[1]  [ 1 ]  Gentile A L, Stafsudd O M. MRSBulletin, 1974, 9 (2) : 105—116
[2]  [ 3 ]  Schunemann P G, Pollak T M. J. Cryst. Growth, 1997, 174: 272—277
[3]  [ 4 ]  Ruderman W, Zwieback I. MRS Symp. Proc. , 2000, 607: 361—372
[4]  [ 5 ]  Zawilski K T, Schunemann P G, Pollak TM. J. Cryst. Growth, 2008, 310: 1897—1903
[5]  [ 8 ]  Feigelson R S, Route R K, Swarts H W. J. Cryst. Growth, 1975, 28: 138—144
[6]  [ 9 ]  Byer R L, Kildal H, Feigelson R S. App l. Phys. Lett. , 1971, 19 (7) : 237—240
[7]  [ 10 ]  Valeri-GilM L, Ricon C. Mater. Lett. , 1993, 17: 59—62
[8]  [ 12 ]  Zakel A, Blackshire J L, Schunemann P G, et al. App l. Optics, 2002, 41 (12) : 2299—2303
[9]  [ 16 ]  Nagashio K, Watcharapasorn A, Zawilski K T, et al. J. Cryst. Growth, 2004, 269: 195—206
[10]  [ 17 ]  Bai L, Giles N C, Schunemann P G. J. App l. Phys. , 2005, 97 (2) : art. no. 023105
[11]  [ 20 ]  Halliburton L E, Edwards G J, Schunemann P G, et al. J. App l. Phys. , 1995, 77 (1) : 435—437
[12]  [ 21 ]  Schunemann P G, Pollak T M. MRS Bulletin, 1998, 23: 23—27
[13]  [ 25 ]  Paudel T R, Lambrecht W R L. Phys. Rev. B, 2008, 78 (8) : art. no. 085214
[14]  [ 26 ]  Blanco M A, Costales A, Luana V, et al. App l. Phys. Lett. , 2004, 85 (19) : 4376—4378
[15]  [ 27 ]  Hong K S, Speyer R F, Condrate R A. J. Phys. Chem. Solids, 1990, 51 (8) : 969—976
[16]  [ 32 ]  Kildal H. Phys. Rev. B, 1974, 10 (12) : 5082—5087
[17]  [ 34 ]  Aufgang J B, Labrie D, Olson K, et al. Semicond. Sci. Technol. , 1997, 12: 1257—1264
[18]  [ 35 ]  Bai L, Garces N Y, Xu C, et al. Proc. of SPIE, 2004, 5337: 22—29
[19]  [ 38 ]  Ptak A J, Jain S, Stevens K T, et al. MRS Symp. Proc. , 2000, 607: 427—433
[20]  [ 39 ]  Bai L, Xu C, Giles N C, et al. J. App l. Phys. , 2006, 99 (1) : art. no. 013512
[21]  [ 40 ]  Bai L, Garces N Y, Yang N, et al. MRS Symp. Proc. , 2003, 744: 537—542
[22]  [ 41 ]  J iang X, Miao M S, Lambrecht W R L. Phys. Rev. B, 2005, 71 (20) : art. no. 205212
[23]  [ 42 ]  J iang X, Miao M S, Lambrecht W R L. Phys. Rev. B, 2006, 73 (19) : art. no. 193203
[24]  [ 43 ]  J iang X, Lambrecht W R L. Phys. Rev. B, 2004, 69 (3) : art. no. 035201
[25]  [ 46 ]  Fischer D W, Ohmer M C, McCrae J E. J. App l. Phys. , 1997, 81 (8) : 3579—3585
[26]  [ 47 ]  Bai L, Xu C, Nagashio K, et al. J. Phys. Condens. Matter, 2005, 17: 5687—5696
[27]  [ 2 ]  Feigelson R S, Route R K. J. Cryst. Growth, 1980, 49: 261—273
[28]  [ 6 ]  LvW Q, Yang C H, Sun L, et al. Chin. J. Struct. Chem. , 2009, 28 (5) : 553—558
[29]  [ 7 ]  Schunemann P G. Proc. of SP IE, 2007, 6455: art. no. 64550
[30]  [ 11 ]  Hopkins F K. Laser FocusWorld, 1995, 31 (7) : 87—93
[31]  [ 13 ]  Vodopyanov K L, Knippels G M H, van derMeerA F G, et al. Opt. Commun. , 2002, 202: 205—208
[32]  [ 14 ]  Vodopyanov K L, Schunemann P G. Op t. Lett. , 1998, 23 (14) : 1096—1098
[33]  [ 15 ]  Feigelson R S. J. Cryst. Growth, 2006, 292: 179—187
[34]  [ 18 ]  McCrae J E, Hengehold R L, Yeo Y K, et al. App l. Phys. Lett. , 1997, 70 (4) : 455—457
[35]  [ 19 ]  Iseler G W, Kildal H, Menyuk N. J. Electron. Mater. , 1978, 7 (6) : 737—755
[36]  [ 22 ]  Zwieback I, Perlov D, Maffetone J P, et al. App l. Phys. Lett. , 1998, 73 (15) : 2185—2187
[37]  [ 23 ]  Xu C, Bai L, Giles N C. J. Phys. : Condens. Matter, 2006, 18: 2741—2747
[38]  [ 24 ]  Pandey R, Ohmer M C, Gale J D. J. Phys. : Condens. Matter. , 1998, 10: 5525—5533
[39]  [ 28 ]  Abrahams S C, Bernstein J L. J. Chem. Phys. , 1974, 61 ( 3): 1140—1146
[40]  [ 29 ]  Shileika A. Surf. Sci. , 1973, 37: 730—747
[41]  [ 30 ]  Marenkin S F, Novotortsev V M, Palkina K K, et al. Inorg. Mater. , 2004, 40 (2) : 93—95
[42]  [ 31 ]  Boyd G D, Buehler E, Storz F G, et al. IEEE J. Quantum Elect. , 1972, 8 (4) : 419—426
[43]  [ 33 ]  Garces N Y, Giles N C, Halliburton L E, et al. J. App l. Phys. , 2003, 94 (12) : 7567—7570
[44]  [ 36 ]  Schunemann P G, Setzler S D, Pollak T M, et al. J. Cryst. Growth, 2001, 225: 440—444
[45]  [ 37 ]  Bai L, Giles N C, Schunemann P G, et al. J. App l. Phys. , 2004, 95 (9) : 4840—4844
[46]  [ 44 ]  Rak Z, Mahanti S D, Mandal K C, et al. J. Phys. Chem. Solids, 2009, 70 (2) : 344—355
[47]  [ 45 ]  Rak Z, Mahanti S D, Mandal K C, et al. J. Phys. Condens. Mat. , 2009, 21 (1) : art. no. 015504

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