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污秽和水分对瓷支柱绝缘子发热的影响

DOI: 10.13336/j.1003-6520.hve.2015.09.032, PP. 3054-3060

Keywords: 瓷支柱绝缘子,水分,污秽,温升,饱和特性,红外热像

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Abstract:

绝缘子表面污秽受潮和水分侵入瓷体均可导致瓷支柱绝缘子出现异常发热,比较二者所引起的温升规律具有重要的实际应用价值。为此,选取具有相同运行年限和气象环境条件的试品,发热试品在现场局部有明显发热,不发热试品表面温度分布均匀。研究结果表明发热试品经干燥处理后发热点暂时性消失,浸泡后的试品温升最大值约为浸泡前数值的2倍,浸泡后高湿和自然风干两种状态下温升变化趋势一致,差值;72h时的局部温升变化幅值增加不明显。不发热试品在退网、干燥处理等两种状态下各部位温升值均<;0.4℃,浸泡后在表面湿润状态下最大温升仅为1.2℃。发热试品表面污秽受潮湿润后的局部温升值远小于水分侵入瓷体后的温升值,浸泡前的发热试品热点位于7号伞瓷柱附近,浸泡后发热点迁移到3号伞瓷柱附近。发热试品异常发热系绝缘子低压端金具同瓷体胶装处有明显的裂纹和凹坑,该缺陷导致水分侵入瓷体后会引起瓷体局部出现异常发热。

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