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航天器内部孤立导体电子照射表面起电时域特性

DOI: 10.13336/j.1003-6520.hve.2015.03.039, PP. 991-997

Keywords: 孤立导体,电子照射,二次电子,表面电位,起电时间,电子能量

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Abstract:

为解决高能电子给航天器内部孤立导体带来的静电充电问题,综合考虑空间环境中电子流密度、照射电子能量、金属材料二次电子特性及材料大小等因素,理论推导出电子照射金属表面起电时域一般微分表达式。利用有限差分法对微分方程进行数值求解,通过具体例子讨论了不同金属在电子照射下表面电位随时间变化的情况。得到了入射电子流密度、电子能量、金属二次电子系数及照射时间等因素与航天器内部孤立导体表面电位变化规律。结果表明,通过对材料及航天器内部空间环境参数的控制,可以使充电至放电电位所需时间大于放电时间,避免持续不间断放电的发生,从而减小放电造成的危害。

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