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电化学  2005 

Sb在Au单晶电极上结构敏感吸附行为的比较

, PP. 140-145

Keywords: Sb,Au(111),Au(100),不可逆吸附,欠电位沉积,扫描隧道显微镜

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Abstract:

本文研究比较Sb(III)在Au(111)和Au(100)电极上的不可逆吸附与还原和Sb的欠电位沉积行为及其相互影响.现场扫描隧道显微镜和循环伏安法测试结果表明,基底表面结构不仅影响阴离子的吸附行为和Sb的吸附结构,而且还影响其自身结构的稳定性.在Au(111)表面,致密无序膜的SbO+不可逆吸附层还原后基本保持原有的无序结构;而在Au(100)表面,由于SO42-的共吸附,不可逆吸附物种还原后形成(2×2)有序结构.在Au(111)表面上,Sb的欠电位沉积伴随显著的合金化,且因表面有序结构的破坏而形成沟道状二维结构;但对Au(100)表面,由于其晶格和尺寸与稳定的AuSb2合金之(100)面有较好的匹配性,使Au与Sb得以形成有序的表面化合物,从而避免了欠电位沉积过程中的表面合金化问题,进一步体现基底结构的敏感性和重要性.

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