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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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硅的表面结构与电化学(英文)
, PP. 1-8
Keywords: 硅,侵刻,溶解,表面结构,器件加工,表面反应,微机电系统
Abstract:
从原子水平到微米尺寸,准确控制硅表面结构的精密加工,诸如无序的表面粗糙或者精细的图案,乃是电子元件性能及其可靠性的保证.硅在液中的湿清洗以及硅表面侵刻的电化学反应对硅表面结构的形成具有重要作用.近数十年来,有关阐明和控制硅/溶液界面上复杂的电化学反应及其与表面结构形成的关系已有大量的研究,相关研究成果已在新近编著成书.本文综合有关方面研究资料评述现代硅溶解及其形成的表面结构.
| [1] | Kern W.[J]J.Electrochem.Soc.,1990,137:1887.
|
| [2] | Bassous E.Transactions on Electron Devices[M].IEEE.1978.Vol.ED-25,1178.
|
| [3] | Zhang X G.Electrochemistry of Silicon and Its Oxide[M].Beijing:Chinese Chemical Industry Press,2004.
|
| [4] | Chazalvie J N.Etman l M,Ozanam F[J].J.Electro-anal.Chem.,1991,297:533.
|
| [5] | Chen LC,Chen M,Lien C et al.[J].J.Elechochem.Soc.,1995,.142:.170.
|
| [6] | Zhang X G,Collins S D,Smith R L.[M].J.Electro-chem.Soc.,1989,136:.1561.
|
| [7] | Memming R,Schwandt G.[J].Surf.Sci.1966,4:109.
|
| [8] | Chazalviel J N,Etman M,Ozanam F[J].J.Electro-anal.Chem.,1991,297:533.
|
| [9] | Palik E D,Glembocki O J,Heard I.[J].J.Electro-che.Soc.,1987,134:404.
|
| [10] | Willeke G,Kellermann K.[J].Semicond.Sci.Tech-nol.,1996:11:415.
|
| [11] | Myamoto M,Kita N,Ishida S,et al.[J].J.Electro-chem.Soc.,1994,141:2899.
|
| [12] | Ghandhi S K.[M].New York:in VLSI FabricationPrinciples,John Willey&Sons,1983.
|
| [13] | Kooij E S,Butter K,Kelly J J.[J].Electrochemicaland Solid State Letter,1999,2:178.
|
| [14] | Wijaranakula W.[J].J.Electrochem.Soc.,1994,141:.3273.
|
| [15] | Yang K H.[J].J.Electrochem.Soc.,1984,131:1140.
|
| [16] | Seidel H,Csepregi L,Heuberger A et al.[J].J.Electrochem.Soc.,1990,13:3612.
|
| [17] | Van den Meerakker J E A.Van den Straaten MHM.[J].J.Electrochem.Soc.,1990.137:1239.
|
| [18] | Seidel H,Csepregi L,Heuberger A,et al.[J].Ibid,Soc.,1990,137:3626.
|
| [19] | Palik E D,Faust J W,Gray Jr HF,et al.[J].Ibid.,1982,129:2052.
|
| [20] | Glembocki O J,Stahlbush E,Tomkiewicz M.[J].J.Electroche.Soc.,1985,132:145.
|
| [21] | Smith R L,Kloeck B,DeRooij N,et al.[J].J.Elec-troanalytical Chem.&Interfac.Electrochem.,1987,238:103.
|
| [22] | Bressers P M.M C,Pagano S A S P,Kelly J J.[J].J.Electronanal.Chem.,1995,391:159.
|
| [23] | Price J B.Semiconducotr Silicon[M].Eds.Huff HR,Burgess R R,Electrochem.Soc.:1973.339.
|
| [24] | Seidel H,Csepregi L,Heuberger A,et al.[J].J.Electrochem.Soc.,1990,137:3612.
|
| [25] | Calabrese G S,Wrighton M S.[J].J.Electrochem.Soc.,1981,128:1014.
|
| [26] | Sato K,Shikita M,Yamashiro T,et al.[J].Sensorsand Actuators,1999,73:131.
|
| [27] | Tellier C R,Brahim-Bounab A.[J].Journal of Mate-rials Science,1994,29:5953.
|
| [28] | Zhang Q,Liu L,Li Z.[J].Sensors and Actuators A,1996,56:.251.
|
| [29] | Hesketh P J,Ju C,Gowda S,et al.[J].Electrochem.Soc.,1993,140:1080.
|
| [30] | Gatos HC,Lavine MC.[M].Burgess:in Progress inSemicopnductors,Volume 9,eds.A.F.Gibon andR.E.,CRC Press,1965.
|
| [31] | Gorostiza P,Diaz R,Sanz F,et al.[J].J.Electro-chem.Soc.,1997,144:4119.
|
| [32] | Norga G J,Platero M,Black K A,et al.[J].J.Elec-trochem.Soc.,1997,144:2801.
|
| [33] | Kloeck B,Collins S D,Rooij N F,et al.Transactionson Electron Devices[M].IEEE,1989,36(4):663l.
|
| [34] | Chen LC,Chen M,Tsaur TH,et al.[J].Sen-sors and Actuators A,1995,49:115.
|
| [35] | Lehmann V,Stengl R,Luigart A.[J].Materials Sci-ence and Engineering,2000,69:11.
|
| [36] | Zhang X G[J].J.Electrochem.Soc.,1991,138:3750.
|
| [37] | Al Rifai M H,Christopherson M,Ottow S,et al.[J].Electrochem.Soc.,2000,147:627
|
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