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草业学报  2015 

硅对NaCl胁迫下甜瓜种子萌发及幼苗生长的影响

DOI: 10.11686/cyxb20150513, PP. 108-116

Keywords: ,NaCl胁迫,种子萌发,幼苗生长,甜瓜

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Abstract:

为明确硅(silicon,Si)对盐胁迫的缓解作用,以“雪梨一号”和“朗秦银蜜”两个耐盐性不同的甜瓜品种为材料,在125mmol/LNaCl胁迫下,研究了不同浓度外源Si对甜瓜种子萌发和幼苗生长的影响。结果表明,NaCl胁迫显著抑制了甜瓜种子萌发,0.50~1.00mmol/L外源Si处理较对照能显著提高种子的发芽率、发芽势、发芽指数、α-淀粉酶活性及吸水率,其中两个品种的种子均以0.75mmol/L外源Si处理效果最好;NaCl胁迫下,0.25~1.00mmol/L外源Si处理后,甜瓜幼苗的株高、叶面积、叶绿素含量、地上部分干重和根系干重较对照显著提高,其中“朗秦银蜜”和“雪梨一号”幼苗分别以0.50和0.75mmol/L外源Si处理效果最好。研究表明,0.25~1.00mmol/L外源Si能促进NaCl胁迫下种子吸水和α-淀粉酶活性的提高来促进种子萌发,通过提高NaCl胁迫下幼苗叶绿素含量维持较高的光合能力促进幼苗生长,缓解盐胁迫对甜瓜种子和幼苗的伤害,外源Si浓度超过1.25mmol/L时对盐胁迫没有缓解效应。

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