Gervais M, Gervais F, Champeaux C, et al. Strongly oriented BST films on La0.9Sr1.1NiO4 electrodes deposited on various substrates for integration of high capacitances on silicon. Appl Surf Sci, 2006, 252: 3085–3091 [2] Gaillot D P.[J].Zhao Q, Zhang F L, et al. Transparency cloak based on High-κ BST rods. In: Proceedings of the 38th EuMC.2008,:- [3] Noda M, Inoue K, Zhu H, et al. Chopperless-operated dielectric bolometer mode of infrared image sensor with ferroelectric BST film using improved operation. IEEE I SAF, 2000, 2: 783–786 [4] Belleville P, Bigarre J, Boy P, et al. Stable PZT sol for preparing reproducible high-permittivity perovskite-based thin films. J Sol-Gel Sci Technol, 2007, 43: 213–221 [5] Ahamed F, Biggers R, Campbell A, et al. New research directions in tunable microwave dielectrics. Integr Ferroelectr, 2004, 66: 139–151 [6] Challali F, Besland M P, Benzeggouta D, et al. Investigation of BST thin films deposited by RF magnetron sputtering in pure Argon. Thin Solid Films, 2010, 518: 4619–4622 [7] Hu W C, Yang C R, Zhang W L, et al. Ferroelectric properties of Ba0.8Sr0.2TiO3 thin films prepared by RF magnetron sputtering. Integr Ferroelectr, 2006, 79: 131–138 [8] Palathinkal T J, Cheng H F, Lee Y C, et al. Low loss tunable thick films based on (Ba,Sr)TiO3 and Ba4Ti13O30 materials[J].Integr Ferroelectr.2004, 66:213- [9] Kim S B, Kim C-Il, Chang E G. Study on surface reaction of Ba,Sr.TiO3 thin films by high density plasma etching. J Vac Sci Technol A, 1999, 17: 2156–2161 [10] Stafford L, Margot J, Langlois O. Barium–strontium–titanate etching characteristics in chlorinated discharges. J Vac Sci Technol A, 2003, 21: 1247–1252 [11] Kim S B, Lee Y H, Kim T H, et al. Etching mechanism of Ba,Sr.TiO3 films in high density Cl2/BCl3/Ar plasma. J Vac Sci Technol A, 2000, 18: 1381–1384 [12] Choi S K, Kim D P, Kim C-II, et al. Damage in etching of Ba,Sr.TiO3 thin films using inductively coupled plasma. J Vac Sci Technol A, 2001, 19: 1063–1067 [13] Kim G H, Kim K T, Kim C-II. Dry etching of Ba,Sr.TiO3 thin films using an inductively coupled plasma. J Vac Sci Technol A, 2005, 23: 894–897 [14] Zhang B, Quan Z C, Zhang T J, et al. Effect of oxygen gas and annealing treatment for magnetically enhanced reactive ion etched (Ba0.65,Sr0.35)TiO3 thin films. J Appl Phys, 2007, 101: 014107 [15] Shibano T, Takenaga T, Nakamura K, et al. Etching of Ba,Sr.TiO3 film by chlorine plasma. J Vac Sci Technol A, 2000, 18: 2080–2084 [16] Wu D S, Lin C C, Horng R H, et al. Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors. J Vac Sci Technol B, 2001, 19: 2231–2236 [17] Kang P S, Kim K T, Kim D P, et al. Study of damage reduction of Ba0.6,Sr0.4.TiO3 thin films etched in Ar/CF4 plasmas. J Vac Sci Technol A, 2003, 21: 1469–1474
[2]
Gervais M, Gervais F, Champeaux C, et al. Strongly oriented BST films on La0.9Sr1.1NiO4 electrodes deposited on various substrates for integration of high capacitances on silicon. Appl Surf Sci, 2006, 252: 3085–3091
[3]
Gaillot D P.[J].Zhao Q, Zhang F L, et al. Transparency cloak based on High-κ BST rods. In: Proceedings of the 38th EuMC.2008,:-
[4]
Noda M, Inoue K, Zhu H, et al. Chopperless-operated dielectric bolometer mode of infrared image sensor with ferroelectric BST film using improved operation. IEEE I SAF, 2000, 2: 783–786
[5]
Belleville P, Bigarre J, Boy P, et al. Stable PZT sol for preparing reproducible high-permittivity perovskite-based thin films. J Sol-Gel Sci Technol, 2007, 43: 213–221
[6]
Ahamed F, Biggers R, Campbell A, et al. New research directions in tunable microwave dielectrics. Integr Ferroelectr, 2004, 66: 139–151
[7]
Challali F, Besland M P, Benzeggouta D, et al. Investigation of BST thin films deposited by RF magnetron sputtering in pure Argon. Thin Solid Films, 2010, 518: 4619–4622
[8]
Hu W C, Yang C R, Zhang W L, et al. Ferroelectric properties of Ba0.8Sr0.2TiO3 thin films prepared by RF magnetron sputtering. Integr Ferroelectr, 2006, 79: 131–138
[9]
Palathinkal T J, Cheng H F, Lee Y C, et al. Low loss tunable thick films based on (Ba,Sr)TiO3 and Ba4Ti13O30 materials[J].Integr Ferroelectr.2004, 66:213-
[10]
Kim S B, Kim C-Il, Chang E G. Study on surface reaction of Ba,Sr.TiO3 thin films by high density plasma etching. J Vac Sci Technol A, 1999, 17: 2156–2161
[11]
Stafford L, Margot J, Langlois O. Barium–strontium–titanate etching characteristics in chlorinated discharges. J Vac Sci Technol A, 2003, 21: 1247–1252
[12]
Kim S B, Lee Y H, Kim T H, et al. Etching mechanism of Ba,Sr.TiO3 films in high density Cl2/BCl3/Ar plasma. J Vac Sci Technol A, 2000, 18: 1381–1384
[13]
Choi S K, Kim D P, Kim C-II, et al. Damage in etching of Ba,Sr.TiO3 thin films using inductively coupled plasma. J Vac Sci Technol A, 2001, 19: 1063–1067
[14]
Kim G H, Kim K T, Kim C-II. Dry etching of Ba,Sr.TiO3 thin films using an inductively coupled plasma. J Vac Sci Technol A, 2005, 23: 894–897
[15]
Zhang B, Quan Z C, Zhang T J, et al. Effect of oxygen gas and annealing treatment for magnetically enhanced reactive ion etched (Ba0.65,Sr0.35)TiO3 thin films. J Appl Phys, 2007, 101: 014107
[16]
Shibano T, Takenaga T, Nakamura K, et al. Etching of Ba,Sr.TiO3 film by chlorine plasma. J Vac Sci Technol A, 2000, 18: 2080–2084
[17]
Wu D S, Lin C C, Horng R H, et al. Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors. J Vac Sci Technol B, 2001, 19: 2231–2236
[18]
Kang P S, Kim K T, Kim D P, et al. Study of damage reduction of Ba0.6,Sr0.4.TiO3 thin films etched in Ar/CF4 plasmas. J Vac Sci Technol A, 2003, 21: 1469–1474
