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科学通报  2011 

含有p-GaN纳米阵列的InGaN/GaN双异质结太阳能电池的制作

DOI: 10.1360/972010-1673, PP. 174-178

Keywords: 纳米阵列结构,InGaN/GaN,双异质结,太阳能电池,外量子效率

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Abstract:

提出了一种提高p-GaN/i-InGaN/n-GaN双异质结太阳能电池外量子效率的方法,即将p-GaN刻蚀成纳米阵列结构.我们使用Ni退火形成微结构掩模,通过感应耦合等离子体(ICP)将p-GaN刻蚀纳米阵列结构.同时,提出了两步刻蚀n-GaN台面的制作工艺,以此在形成p-GaN纳米阵列结构时获得光滑的n-GaN层表面,以此改善后续金属电极的沉积.经测试,含有p-GaN纳米阵列结构的电池峰值外量子效率可达55%,比常规p-GaN膜层基InGaN/GaN太阳能电池的外量子效率提高了10%.

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