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科学通报  2011 

标准CMOS工艺下单片集成MSM光电探测器的2Gb/s光接收机

, PP. 881-885

Keywords: 光接收机,跨阻放大器,MSM光电探测器,CMOS

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Abstract:

在标准互补金属氧化物半导体(complementarymetaloxidesemiconductor,CMOS)工艺下设计了1种单片集成金属-半导体-金属(metal-semiconductor-metal,MSM)光电探测器的光接收机.带有源反馈和负米勒反馈电容的跨阻前置放大器用来提高光接收机的带宽.由于MSM光电探测器具有较高的响应度,所以光接收机的灵敏度得到改善.由于MSM光电探测器的寄生电容较小,在特许半导体0.35μm工艺下实现了带宽为1.7GHz的光接收机.测试结果表明,在-15dBm的光功率和误码率为10-9的条件下,光接收机的数据传输速率达到了2Gb/s.在3.3V电压下,芯片的功耗为94mW.

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