4 Stadlober B, Zirkl M, Beutl M, et al. High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymerfilmgate dielectric. Appl Phys Lett, 2005, 86: 242902？？
[2]
5 Yildirim F A, Ucurum C, Schliewe R R, et al. Spin-cast composite gate insulation for low driving voltages and memory effect in organicfield-effect transistors. Appl Phys Lett, 2007, 90: 083501？？
[3]
6 Singh T B, Marjanovic N, Matt G J, et al. Nonvolatile organic field-effect transistor memory element with a polymeric gate electret. ApplPhys Lett, 2004, 85: 5409-5411？？
[4]
7 Liu Z, Xue F, Su Y, et al. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric. IEEETrans Nanotechnol, 2006, 5: 379-384？？
[5]
8 Zhen L, Guan W, Shang L, et al. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. J Phys D:Appl Phys, 2008, 41: 135111？？
[6]
15 Gunes S, Neugebauer H, Sariciftci N S. Conjugated polymer-based organic solar cells. Chem Rev, 2007, 107: 1324-1338？？
[7]
19 Wu W, Jung G Y, Olynick D L, et al. One-kilobit crossbar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography.Appl Phys A, 2005, 80: 1173-1178？？
[8]
20 Green J E, Choi J W, Boukai A, et al. A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre. Nature, 2007,445: 414-417？？
[9]
21 Sekitani T, Yokota T, Zschieschang U, et al. Organic nonvolatile memory transistors for flexible sensor arrays. Science, 2009, 326:1516-1519？？
[10]
25 Ma L P, Liu J, Yang Y. Organic electrical bistable devices and rewritable memory cells. Appl Phys Lett, 2002, 80: 2997-2999？？
[11]
26 Tondelier D, Lmimouni K, Vuillaume D, et al. Metal/organic/metal bistable memory devices. Appl Phys Lett, 2004, 85: 5763-5765？？
[12]
27 Ouyang J Y, Chu C W, Szmanda C R, et al. Programmable polymer thin film and non-volatile memory device. Nat Mater, 2004, 3: 918-922？？
[13]
28 Prakash A, Ouyang J Y, Lin J L, et al. Polymer memory device based on conjugated polymer and gold nanoparticles. J Appl Phys, 2006, 100:054309？？
[14]
29 Lee P T, Chang T Y, Chen S Y. Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thinfilm. Org Electron, 2008, 9: 916-920？？
[15]
30 Huang J, Virji S, Weiller B H, et al. Nanostructured polyaniline sensors. Chem Eur J, 2004, 10: 1314-1319？？
[16]
31 Majumdar H S, Bandyopadhyay A, Bolognesi A, et al. Memory device applications of a conjugated polymer: Role of space charges. J ApplPhys, 2002, 91: 2433-2437
[17]
32 Bozano L D, Kean B W, Deline V R, et al. Mechanism for bistability in organic memory elements. Appl Phys Lett, 2004, 84: 607-609？？
[18]
33 Ouisse T, Stéphan O. Electrical bistability of polyfluorene devices. Org Electron, 2004, 5: 251-256？？
[19]
36 Kuang Y B, Huang R, Tang Y, et al. Novel thermally stable single-component organic-memory cell based on oxotitanium phthalocyaninematerial. IEEE Electron Device Lett, 2009, 30: 931-933？？
[20]
39 Potember R S, Poehler T O. Electrical switching and memory phenomena in Cu-TCNQ thin films. Appl Phys Lett, 1979, 34: 405-407？？
[21]
40 Gao H, Xue Z, Pang S. Ionized cluster beam deposition of C60, Ag-TCNQ thin films and electrical switching phenomena. J Phys D: ApplPhys, 1996, 29: 1868-1872？？
[22]
41 Tu D Y, Ji Z Y, Shang L W, et al. Organic, bistable devices with AgTCNQ charge transfer complex by vacuum co-deposition. J Semicon,2008, 29: 50-54
[23]
42 Ma L P, Xu Q F, Yang Y. Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer. Appl PhysLett, 2004, 84: 4908-4910
[24]
43 Ma L P, Liu J, Yang Y. US patent application. 2001, US 01/17 206
[25]
44 Reddy V S, Karak S, Ray S K, et al. Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic bistablememory devices. Org Electron, 2009, 10: 138-144？？
[26]
52 Carchano H, Lacoste R, Segui Y. Bistable electrical switching in polymer thin films. Appl Phys Lett, 1971, 19: 414-416？？
[27]
53 Henisch H K, Smith W R. Switching in organic polymer films. Appl Phys Lett, 1974, 24: 589-591？？
[28]
59 Gao H J, Sohlberg K, Xue Z Q, et al. Reversible, nanometer-scale conductance transitions in an organic complex. Phys Rev Lett, 2000, 84:1780-1783？？
[29]
60 Liu Z C, Xue F L, Su Y, et al. Electrically bistable memory device based on spin-coated molecular complex thin film. IEEE Electron DeviceLett, 2006, 27: 151-153？？
[30]
62 Ha H, Kim O. Electrode-material-dependent switching characteristics of organic nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) film. IEEE Electron Device Lett, 2010, 31: 368-370
[31]
67 Kang B S, Ahn S E, Lee M J, et al. High-current-density CuOx/InZnOx thin-film diodes for cross-point memory applications. Adv Mater,2008, 20: 3066-3069？？
[32]
68 Tu D Y, Liu M, Shang L W, et al. Asymmetric electrical bistable behavior of an eicosanoic acid/zirconium oxide bilayer system with rectifyingeffect. Appl Phys Lett, 2008, 92: 123302？？
[33]
69 Kim T W, Choi H, Oh S H, et al. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure.Nanotechnology, 2009, 21: 025201
[34]
70 Sato Y, Tsunoda K, Kinoshita K, et al. Sub-100-μA reset current of nickel oxide resistive memory through control of filamentary conductanceby current limit of MOSFET. IEEE Trans Electron Devices, 2008, 55: 1185-1191？？
[35]
71 Lin H T, Pei Z W, Chen J R, et al. A UV-erasable stacked diode-switch organic nonvolatile bistable memory on plastic substrates. IEEEElectron Device Lett, 2009, 30: 18-20？？
[36]
72 Teo E Y H, Zhang C F, Lim S L, et al. An organic-based diode-memory device with rectifying property for crossbar memory array applications.IEEE Electron Device Lett, 2009, 30: 487－489？？
[37]
73 Cho B, Kim T W, Song S, et al. Rewritable switching of one diode-one resistor nonvolatile organic memory devices. Adv Mater, 2010, 22:1228-1232？？
[38]
75 Eitan B, Kazerounian R, Roy A, et al. Multilevel flash cells and their trade-offs. IEEE Int Electron Devices Meeting Tech Dig, 1996,169-172
[39]
77 Lauters M, McCarthy B, Sarid D, et al. Multilevel conductance switching in polymer films. Appl Phys Lett, 2006, 89: 013507？？
[40]
80 Yang G W, Chen H Y, Ma L P, et al. Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure. Appl PhysLett, 2009, 95: 203506
[41]
82 Xie X N, Gao X Y, Wang Y Z, et al. Negative differential resistance based on electron injection/extraction in conducting organic films. ApplPhys Lett, 2009, 95: 063301？？
[42]
85 Das B C, Pal A J. Switching between different conformers of a molecule: Multilevel memory elements. Org Electron, 2008, 9: 39-44？？
[43]
86 Chen J S, Xu L L, Lin J, et al. Negative differential resistance and multilevel memory effects in organic devices. Semicond Sci Technol, 2006,21: 1121-1124？？
[44]
87 Auciello O, Scott J F, Ramesh R. The physics of ferroelectric memories. Phys Today, 1998, 51: 22-27
[45]
88 Tsumura A, Koezuka H, Ando T. Macromolecular electronic device: Field-effect transistor with a polythiophene thin film. Appl Phys Lett,1986, 49: 1210-1212？？
[46]
91 Stadlober B, Zirkl M, Beutl M, et al. High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymerfilm gate dielectric. Appl Phys Lett, 2005, 86: 242902？？
[47]
93 Schroeder R, Majewski L A, Grell M. All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator.Adv Mater, 2004, 16: 633-636？？
[48]
94 Singh T B, Marjanovic N, Matt G J, et al. Nonvolatile organic field-effect transistor memory element with a polymeric gate electret. ApplPhys Lett, 2004, 85: 5409-5411？？
[49]
95 Baeg K J, Noh Y Y, Ghim J, et al. Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret.Adv Mater, 2006, 18: 3179-3183？？
[50]
99 Clemens W. Low cost RFID tags based on printed Electronics. MikroSystemTechnik KONGRESS, 2007
[51]
101 Ma L P, Pyo S, Ouyang J Y, et al. Nonvolatile electrical bistability of organic/metal-nanocluster/organic system. Appl Phys Lett, 2003, 82:1419-1421？？
[52]
1 Velu G, Legrand C, Tharaud O, et al. Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator.Appl Phys Lett, 2001, 79: 659-661？？
[53]
2 Unni K N N, De Bettignies R, Dabos-Seignon S, et al. A nonvolatile memory element based on an organic field-effect transistor. Appl PhysLett, 2004, 85: 1823-1825
[54]
3 Naber R C G, De Boer B, Blom P W M. Low-voltage polymer field-effect transistors for nonvolatile memories. Appl Phys Lett, 2005, 87:203509？？
[55]
9 Chang C C, Pei Z, Chan Y J. Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory. Appl Phys Lett,2008, 93: 143302？？
[56]
10 Burrows P E, Forrest S R, Sibley S P. Color-tunable organic light-emitting devices. Appl Phys Lett, 1996, 69: 2959-2961？？
[57]
11 Friend R H, Gymer R W, Holmes A B, et al. Electroluminescence in conjugated polymers. Nature, 1999, 397: 121-128？？
13 Brabec C J, Sariciftci N S, Hummelen J C. Plastic solar cells. Adv Funct Mater, 2001, 11: 15-26？？
[60]
14 Peumans P, Uchida S, Forrest S R. Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films. Nature,2003, 425: 158-162？？
[61]
16 Chen Y, Jung G Y, Ohlberg D A A, et al. Nanoscale molecular-switch crossbar circuits. Nanotechnology, 2003, 14: 462-468？？
[62]
17 Chen Y, Ohlberg D A A, Li X M, et al. Nanoscale molecular-switch devices fabricated by imprint lithography. Appl Phys Lett, 2003, 82:1610-1612？？
[63]
18 Jung G Y, Ganapathiappan S, Ohlberg D A A, et al. Fabrication of a 34×34 crossbar structure at 50 nm half-pitch by UV-based nanoimprintLithography. Nano Lett, 2004, 4: 1225-1229？？
[64]
22 Xu W, Chen G R, Li R J, et al. Two new all-organic complexes with electrical bistable states. Appl Phys Lett, 1995, 67: 2241-2242？？
[65]
23 Chu C W, Ouyang J Y, Tseng J H, et al. Organic donor-acceptor system exhibiting electrical bistability for use in memory devices. Adv Mater,2005, 17: 1440-1443？？
[66]
24 Tu C H, Lai Y S, Kwong D L. Memory effect in the current-voltage characteristic of 8-Hydroquinoline aluminum salt films. IEEE ElectronDevice Lett, 2006, 27: 354-356
[67]
34 Oyamada T, Tanaka H, Matsushige K, et al. Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition. ApplPhys Lett, 2003, 83: 1252-1254？？
[68]
35 Mahapatro A K, Agrawal R, Ghosh S. Electric-field-induced conductance transition in 8-hydroxyquinoline aluminum (Alq3). J Appl Phys,2004, 96: 3583-3585？？
[69]
37 Chen J S, Ma D G. Single-layer organic memory devices based on N, N′-di(naphthalene-l-yl)-N, N′-diphenyl-benzidine. Appl Phys Lett, 2005,87: 023505？？
[70]
38 Liu X H, Ji Z Y, Tu D Y, et al. Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonatethin film. Org Electron, 2009, 10: 1191-1194
[71]
45 Simmons J G, Verderber R R. New conduction and reversible memory phenomena in thin insulating films. Proc R Soc Lond A, 1967, 301:77-102？？
[72]
46 Kang S H, Crisp T, Kymissis I, et al. Memory effect from charge trapping in layered organic structures. Appl Phys Lett, 2004, 85: 4666-4668？？
[73]
47 Tang W, Shi H, Xu G, et al. Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunnelingin molecular and organic electronic devices. Adv Mater, 2005, 17: 2307-2311？？
[74]
48 Ouyang J, Chu C W, Tseng R J, et al. Organic memory device fabricated through solution processing. Proc IEEE, 2005, 93: 1287-1296？？
[75]
49 Prakash A, Ouyang J Y, Lin J L, et al. Polymer memory device based on conjugated polymer and gold nanoparticles. J Appl Phys, 2006, 100:054309？？
[76]
50 Song Y, Ling Q D, Lim S L, et al. Electrically bistable thin-film device based on PVK and GNPs polymer material. IEEE Electron DeviceLett, 2007, 28: 107-110？？
[77]
51 Tseng R J, Baker C O, Shedd B, et al. Charge transfer effect in the polyaniline-gold nanoparticle memory system. Appl Phys Lett, 2007, 90:053101？？
[78]
54 Segui Y, Ai B, Carchano H. Switching in polystyrene films: Transition from on to off state. J Appl Phys, 1976, 47: 140-143？？
[79]
55 Pender L F, Fleming R J. Memory switching in glow discharge polymerized thin films. J Appl Phys, 1975, 46: 3426-3431？？
[80]
56 Tu C H, Lai Y S, Kwong D L. Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films. IEEE ElectronDevice Lett, 2006, 27: 354-356
[81]
57 Lai Y S, Tu C H, Kwong D L, et al. Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications. ApplPhys Lett, 2005, 87: 122101？？
[82]
58 Ouyang M, Hou S M, Chen H F, et al. A new organic-organic complex thin film with reproducible electrical bistability properties. Phys LettA, 1997, 235: 413-417？？
[83]
61 Ma Y, Cao X B, Li G, et al. Improving the on/off ratio and reversibility of recording by rational structural arrangement of donor-acceptormolecules. Adv Funct Mater, 2010, 20: 803-810？？
[84]
63 Ouyang J Y, Yang Y. Polymer:metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatilememory devices. Appl Phys Lett, 2010, 96: 063506？？
[85]
64 Hua Z Y, Chen G R. A new material for optical, electrical and electronic thin film memories. Vacuum, 1992, 43: 1019-1023？？
[86]
65 Kinoshita K, Tsunoda K, Sato Y H, et al. Reduction in the reset current in a resistive random access memory consisting of NiOx broughtabout by reducing a parasitic capacitance. Appl Phys Lett, 2008, 93: 033506？？
[87]
66 Lee M J, Park Y, Suh D S, et al. Two series oxide resistors applicable to high speed and high density nonvolatile memory. Adv Mater, 2007,19: 3919-3923？？
[88]
74 Lai S. Flash memories: Where we were and where we are going. IEEE Int Ele Devices Meeting Tech Dig, 1998, 971-973
[89]
76 Majumdar H S, Baral J K, ？sterbacka R, et al. Fullerene-based bistable devices and associated negative differential resistance effect. OrgElectron, 2005, 6: 188-192
[90]
78 Park J G, Nam W S, Seo S H, et al. Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiOtunneling barrier. Nano Lett, 2009, 9: 1713-1719？？
[91]
79 Reddy V S, Karak S, Dhar A. Multilevel conductance switching in organic memory devices based on AlQ3 and Al/Al2O3 core-shell nanoparticles.Appl Phys Lett, 2009, 94: 173304？？
[92]
81 Rath A K, Pal A J. To induce negative differential resistance in organic devices through a ferroelectric polymer. Org Electron, 2009, 10:1116-1119？？
[93]
83 Lauters M, McCarthy B, Sarid D, et al. Nonvolatile multilevel conductance and memory effects in organic thin films. Appl Phys Lett, 2005,87: 231105？？
[94]
84 Bandyopadhyay A, Pal A J. Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule. ApplPhys Lett, 2004, 84: 999-1001？？
[95]
89 Unni K N N, Bettignies R, Dabos-Seignon S, et al. A nonvolatile memory element based on an organic field-effect transistor. Appl Phys Lett,2004, 85: 1823-1825？？
[96]
90 Naber R C G, Boer B, Blom P W M, et al. Low-voltage polymer field-effect transistors for nonvolatile memories. Appl Phys Lett, 2005, 87:203509？？
[97]
92 Yildirim F A, Ucurum C, Schliewe R R, et al. Spin-cast composite gate insulation for low driving voltages and memory effect in organicfield-effect transistors. Appl Phys Lett, 2007, 90: 083501？？
[98]
96 Liu Z, Xue F, Su Y, et al. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric. IEEETrans Nanotechnol, 2006, 5: 379-384？？
[99]
97 Zhen L, Guan W, Shang L, et al. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. ApplPhys, 2008, 41: 135111
[100]
98 Kim S J, Park Y S, Lyu S H, et al. Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunnelinginsulator layers. Appl Phys Lett, 2010, 96: 033302？？
[101]
100 Guo Y L, Di C A, Ye S H, et al. Multibit storage of organic thin-film field-effect transistors. Adv Mater, 2009, 21: 1954-1959？？
