Moore G E. Gramming more component onto integrated circuits. Electronics, 1965, 38: 114-117 [2] Eigler D M, Schweizer E K. Positioning single atoms with a scanning tunneling microscope. Nature, 1990, 344: 524-526 [3] Stroscio J A, Eigler D M. Atomic and molecular manipulation with the scanning tunnelling microscope. Science, 1991, 254: 1319-1326 [4] Aviram A, Ratner M A. Molecular rectifiers. Chem Phys Lett, 1974, 29: 277-283 [5] Wolf S A, Awschalom D D, Buhrman R A, et al. Spintronics: A spin-based electronics vision for the future. Science, 2001, 294: 1488-1495 [6] Champagne A R, Pasupathy A N, Ralph D C. Mechanically adjustable and electrically gated single-molecule transistors. Nano Lett, 2005, 5: 305-308 [7] Garcia N, Munoz M, Zhao Y W. Magnetoresistance in Ni nanocontacts in excess of 200% at room temperature and 100 Oe field. Phys Rev Lett, 1999, 82: 2923-2926 [8] Chopra H D, Hua S Z. Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature. Phys Rev B, 2002, 66: 020403 [9] Chopra H D, Matthew R S, Jason N A, et al. The quantum spin-valve in cobalt atomic point contacts. Nat Mater, 2005, 4: 832-837 [10] Haug T, Perzlmaier K, Back C H. In situ magnetoresistance measurements of ferromagnetic nanocontacts in the Lorentz transmission electron microscope. Phys Rev B, 2009, 79: 024414 [11] Sangiao S, Morellón L, Ibarra M R, et al. Ferromagnet-superconductor nanocontacts grown by focused electron/ion beam. Solid State Commun, 2011, 151: 37-41 [12] 程浩, 刘鸿, 汪令江, 等. 铁磁金属纳米点接触的磁电阻. 安徽大学学报(自然科学版), 2011, 35: 64-69 [13] Tatara G, Zhao Y W, Munoz M, et al. Domain wall scattering explains 300% ballistic magnetoconductance of nanocontacts. Phys Rev Lett, 1999, 83: 2030-2033 [14] Egelhoff Jr W F, Gana L, Ettedguia H, et al. Artifacts that mimic ballistic magnetoresistance. J Magn Magn Mater, 2005, 287: 496-500 [15] Doudin B, Viret M. Ballistic magnetoresistance[J].J Phys: Cond Matter.2008, 20:083201- [16] Mallett J J, Svedberg E B, Ettedgui H, et al. Absence of ballistic magnetoresistance in Ni contacts controlled by an electrochemical feedback system. Phys Rev B, 2004, 70: 172406 [17] Garcia N, Munoz M, Qian G G, et al. Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronics. Appl Phys Lett, 2001, 79: 4550-4552
[2]
Moore G E. Gramming more component onto integrated circuits. Electronics, 1965, 38: 114-117
[3]
Eigler D M, Schweizer E K. Positioning single atoms with a scanning tunneling microscope. Nature, 1990, 344: 524-526
[4]
Stroscio J A, Eigler D M. Atomic and molecular manipulation with the scanning tunnelling microscope. Science, 1991, 254: 1319-1326
[5]
Aviram A, Ratner M A. Molecular rectifiers. Chem Phys Lett, 1974, 29: 277-283
[6]
Wolf S A, Awschalom D D, Buhrman R A, et al. Spintronics: A spin-based electronics vision for the future. Science, 2001, 294: 1488-1495
[7]
Champagne A R, Pasupathy A N, Ralph D C. Mechanically adjustable and electrically gated single-molecule transistors. Nano Lett, 2005, 5: 305-308
[8]
Garcia N, Munoz M, Zhao Y W. Magnetoresistance in Ni nanocontacts in excess of 200% at room temperature and 100 Oe field. Phys Rev Lett, 1999, 82: 2923-2926
[9]
Chopra H D, Hua S Z. Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature. Phys Rev B, 2002, 66: 020403
[10]
Chopra H D, Matthew R S, Jason N A, et al. The quantum spin-valve in cobalt atomic point contacts. Nat Mater, 2005, 4: 832-837
[11]
Haug T, Perzlmaier K, Back C H. In situ magnetoresistance measurements of ferromagnetic nanocontacts in the Lorentz transmission electron microscope. Phys Rev B, 2009, 79: 024414
[12]
Sangiao S, Morellón L, Ibarra M R, et al. Ferromagnet-superconductor nanocontacts grown by focused electron/ion beam. Solid State Commun, 2011, 151: 37-41
Tatara G, Zhao Y W, Munoz M, et al. Domain wall scattering explains 300% ballistic magnetoconductance of nanocontacts. Phys Rev Lett, 1999, 83: 2030-2033
[15]
Egelhoff Jr W F, Gana L, Ettedguia H, et al. Artifacts that mimic ballistic magnetoresistance. J Magn Magn Mater, 2005, 287: 496-500
[16]
Doudin B, Viret M. Ballistic magnetoresistance[J].J Phys: Cond Matter.2008, 20:083201-
[17]
Mallett J J, Svedberg E B, Ettedgui H, et al. Absence of ballistic magnetoresistance in Ni contacts controlled by an electrochemical feedback system. Phys Rev B, 2004, 70: 172406
[18]
Garcia N, Munoz M, Qian G G, et al. Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronics. Appl Phys Lett, 2001, 79: 4550-4552
