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科学通报  2015 

化学气相渗透制备SiCw/SiC层状结构陶瓷

DOI: 10.1360/N972014-00465, PP. 300-308

Keywords: SiCw/SiC层状,结构陶瓷,SiC晶须,化学气相渗透,流延法,强韧性

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Abstract:

提出了采用流延法(tapecasting,TC)结合化学气相渗透法(chemicalvaporinfiltration,CVI)制备碳化硅晶须(SiCw)/SiC层状结构陶瓷的方法,分析了TC-CVI方法的特点,研究了制备工艺对层状结构陶瓷力学性能和微观结构的影响,探讨了SiCw/SiC层状结构陶瓷的强韧化机理.结果表明,TC-CVI制备方法一方面能够提高晶须体积分数,减少制备过程中对晶须的损伤并且致密化单层,保持整个制备过程中材料体积无收缩,从而有效地提高材料的强度;另一方面,TC-CVI制备方法能够较好地控制层内(晶须/基体)及层间(单层/单层)界面结合强度,进而提高材料的韧性.SiCw/SiC层状结构陶瓷中晶须含量可达40%(体积分数),其弯曲强度、拉伸强度和断裂韧性分别为315MPa,158MPa和8.02MPam1/2.层状结构陶瓷材料的单层厚度对材料致密性及层间界面结合强度产生显著影响;晶须表面状态对层内界面结合强度有重要作用.SiCw/SiC层状结构陶瓷充分发挥层状结构与晶须协同增韧作用,层间裂纹偏转,层内裂纹偏转、裂纹桥接和晶须拔出等为主要的增韧机制.

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