1 Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306: 666-669
[2]
2 Castro Neto A H, Guinea F, Peres N M R, et al. The electronic properties of graphene. Rev Mod Phys, 2009, 81: 109-162
[3]
3 Ando T. The electronic properties of graphene and carbon nanotubes. NPG Asia Mater, 2009, 1: 17-21
[4]
5 Schwierz F. Graphene transistors. Nat Nanotechnol, 2010, 5: 487-496
[5]
6 Boero G, Demierre M, Besse P A, et al. Micro-hall devices: Performance, technologies and applications. Sens Actuator A-Phys, 2003, 106: 314-320
[6]
7 Xu H, Zhang Z, Shi R, et al. Batch-fabricated high-performance graphene hall elements. Sci Rep, 2013, 3: 1207
[7]
8 Hara T, Mihara M, Toyoda N, et al. Highly linear gaas hall devices fabricated by ion implantation. IEEE Trans Electron Devices, 1982, 29: 78-82
[8]
9 Shi R, Xu H, Chen B, et al. Scalable fabrication of graphene devices through photolithography. Appl Phys Lett, 2013, 102: 113102
[9]
13 Pal A N, Ghosh A. Ultralow noise field-effect transistor from multilayer graphene. Appl Phys Lett, 2009, 95: 082105
[10]
4 Lin Y M, Valdes-Garcia A, Han S J, et al. Wafer-scale graphene integrated circuit. Science, 2011, 332: 1294-1297
[11]
10 Huang L, Zhang Z, Chen B, et al. Ultra-sensitive graphene hall elements. Appl Phys Lett, 2014, 104: 183106
[12]
11 Xu H, Huang L, Zhang Z, et al. Flicker noise and magnetic resolution of graphene hall sensors at low frequency. Appl Phys Lett, 2013, 103: 112405
[13]
12 Gao L, Ren W, Xu H, et al. Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum. Nat Commun, 2012, 3: 699
[14]
14 Kazakova O, Gallop J C, Cox D C, et al. Optimization of 2DEG InAs/GaSb hall sensors for single particle detection. IEEE Trans Magn, 2008, 44: 4480-4483
[15]
15 Heremans J. Solid state magnetic field sensors and applications. J Phys D Appl Phys, 1993, 26: 1149
[16]
16 Huang L, Xu H, Zhang Z, et al. Graphene/Si CMOS hybrid Hall integrated circuits. Sci Rep, 2014, 4: 5548
