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一种基于diC/dt反馈控制的大功率IGBT驱动保护方法

, PP. 33-41

Keywords: IGBT模块,驱动保护,开关损耗,软开关

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Abstract:

针对大功率IGBT提出一种新型的有源门极驱动保护方法。在IGBT正常开通与关断过程中,利用diC/dt反馈控制,设计软开通及软关断电路,有效缩短IGBT的开通与关断时间,提高IGBT的开关频率,减小器件功率损耗;在IGBT发生短路时,结合diC/dt反馈技术,设计改进型有源钳位保护电路,实现IGBT软关断,防止关断时产生较大的过冲电压损坏IGBT,同时有效减小门极触发电阻Rg上的损耗。利用Saber软件进行电路仿真,并基于大功率IGBT模块YMIF1200-33实验平台,验证方案的可行性,结果表明,相对于传统控制方案,正常开关情况下,开通时间缩短了26.5%,关断时间缩短了52.6%;短路情况下,相对于传统有源钳位方法,改进方案在有效钳住VCE电压的同时,关断期间门极电阻上的电流减小到原来的35.4%,并能在短路发生的第一时间迅速可靠地关断IGBT。

References

[1]  张云,徐衍亮,李豹.基于动态电源的MOSFET驱动优化[J].电工技术学报,2013,28(12):269-275.
[2]  Zhang Yun,Xu Yanliang,Li Bao.Research on optimization of MOSFET driving based on dynamic power source[J].Transactions of China Electrotechnical Society,2013,28(12):269-275.
[3]  John V,Suh B,Lipo T A.Fast-clamped short-circuit protection of IGBT’s[J].IEEE Transactions on Industry Applications,1999,35(2):477-486.
[4]  Xu Z,Li M,Wang F,et al.Investigation of Si IGBT operation at 200℃ for traction applications[J].IEEE Transactions on Power Electronics,2013,28(5):2604-2615.
[5]  John V,Suh B S,Lipo T A.High-performance active gate drive for high-power IGBTs[J].IEEE Transactions on Industrial Electronics,1999,35(5):1108-1117.
[6]  Musumeci S,Racati A,Testa A,et al.Switching behavior improvement of isolated gate-controlled devices[J].IEEE Transactions on Power Electronics,1997,12(4):645-653.
[7]  Michel L,Boucher X,Cheriti A,et al.FPGA implementation of an optimal IGBT gate driver based on Posicast control[J].IEEE Transactions on Power Electronics,2012,28(5):1-7.
[8]  Dang L,Kuhn H,Mertens A.Digital adaptive driving strategies for high-voltage IGBTs[J].IEEE Translation on Industry Applications,2013,49(4):1628-1636.
[9]  Rodríguez-Blanco M A,Claudi o-Sánchez A,Theilliol D,et al.A failure-detection strategy for IGBT based on gate-voltage behavior applied to a motor drive system[J].IEEE Transactions on Industrial Electronics,2011,58(5):1625-1633.
[10]  Lee J,Hyun D.Gate voltage pattern analyze for short-circuit protection in IGBT inverters[C].IEEE Power Electronics Specialists Conference,Orlando,Florida,2007:1913-1917.
[11]  尹培培,洪峰,成华,等.无源无损软开关双降压式全桥逆变器[J].电工技术学报,2014,29(6):40-48.
[12]  Yin Peipei,Hong Feng,Cheng Hua,et al.Passive lossless soft-switching dual buck full bridge inverter[J].Transactions of China Electrotechnical Society,2014,29(6):40-48.
[13]  陈永真.IGBT短路保护的控制策略分析[J].电气传动,2010,40(8):38-41.
[14]  Chen Yongzhen.Control strategy analysis of IGBT short-circuit protection[J].Electric Drive,2010,40(8):38-41.
[15]  唐勇,汪波,陈明,等.高温下的IGBT可靠性与在线评估[J].电工技术学报,2014,26(6):17-23.
[16]  Tang Yong,Wang Bo,Chen Ming,et al.Reliability and on-line evaluation of IGBT modules under high temperature[J].Transactions of China Electrotechnical Society,2014,26(6):17-23.
[17]  Palmer P R,Githiari A N.The seseries connection of IGBTs with active voltage sharing [J].IEEE Transactions on Power Electronics,1997,12(4):637-644.
[18]  Fink K,Bernet S.Advanced gate drive unit with closed-looped diC/dt-control[J].IEEE Transactions on Power Electronics,2013,28(5):2587-2595.
[19]  IGBT DRIVERS.Advantage of advanced active clamping[R].Power Electronics Europe,2009,8:27-29.
[20]  Wang Zhiqiang,Shi Xiaojie,Tolbert L M.A di/dt feedback based active gate driver for smart switching and fast overcurrent protection of IGBT modules[J].IEEE Transactions on Power Electronics,2014,29(7):3720-3732.

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