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无源无损软开关中压控可变电容的研究

, PP. 79-86

Keywords: 无源无损软开关,压控可变电容,附加损耗,辅助电源

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Abstract:

在无源无损软开关中采用压控可变电容的方法来进一步减少IGBT的关断损耗,从而缓解其散热压力。该压控可变电容由两个缓冲电容和辅助MOSFET构成,其控制方法简单,可自动实现电容容值的变换。同时,辅助MOSFET由其串联支路上的电容电压和辅助电源控制。在IGBT关断之前,MOSFET由于其控制信号为高电平而处于导通状态,因此当IGBT关断时,可变电容等效为两个电容并联,从而表现为大电容特性,减少其CE两端电压的上升斜率;当MOSFET的控制信号下降到关断阈值时,可变电容表现为小电容特性,从而快速达到IGBT的关断稳态。依据可变电容的理论波形对其工作原理进行详细分析,并对该无源无损软开关回路中额外损耗进行理论计算。最后通过搭建Buck变换器的实验平台对上述理论进行验证。

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