Parthasarathy V, Zhu R, Khemka V, et al. A 0.25μm CMOS based 70V smart power technology with deep trench for high-voltage isolation[C]. IEEE IEDM Tech, San Francisco, CA, USA, 2002: 459-462.
[2]
Hidefumi T, Kyosuke M, Kimimori H, et al. Floating island and thick bottom oxide trench gate MOSFET (FITMOS)[C]. Proceedings of the 17th International Symposium on Power Semiconductor Devices & IC's, Santa Barbara, CA, USA, 2005:1-4.
[3]
Lovoltech. High performance N-channel vertical power JFET transistor[OL]. Company datasheet, 2003: 1-5. http://www.qspeed.com (formerly http://www. lovol tech. com).
