Shammas N, Chamund D, Taylor P. Forward and reverse recovery behavior of diodes in power converter applications[C]. 24th International Conference on Microelectronics, 2004, 1: 3-10.
[2]
Lauritzen P O, Ma C L. A simple diode model with reverse recovery[J]. IEEE Transactions on Power Electronics, 1991, 6(2): 188-191.
[3]
Tseng K J, Foo C F, Palmer P R. Implementing power diode models in Spice and Saber[C]. IEEE Power Electronics Specialists Conference, 1994, 1: 59-63.
[4]
Chang W L, Song B P. Design of a thyristor snubber circuit by considering the reverse recovery process[J]. IEEE Transactions on Power Electronics, 1988, 3(4): 440-446.
Liang Y C, Gosbell V J. Diode forward and reverse recovery model for power electronic SPICE simulation[J]. IEEE Transactions on Power Elec- tronics, 1990, 5(3): 346-356.
[7]
Ma C L, Lauritizen P O. A simple power diode model with forward and reverse recovery[J]. IEEE Transactions on Power Electronics, 1993, 8(4): 342-346.
[8]
Kraus R, Hoffmann K, Mattausch H J. A precise model for the transient characteristics of power diodes[C]. IEEE Power Electronics Specialists Conference, 1992, 1: 863-869.
[9]
Yamazaki M, Kobayashi H, Shinohara S. Forward transient behavior of PiN and super junction diodes[C]. The 16th International Symposium on Power Semiconductor Devices and ICs, Kitayushu, 2004: 197-200.
[10]
Kolessar R. Physical study of the power diode turn-on process[C]. IEEE Industry Applications Conference, 2000, 5: 2934-2940.
[11]
李毅, 魏宇洁. 功率模块应用手册[M]. 香港: 赛米控国际公司, 2003.
[12]
Stephen J F, Daniel J T, John E F, et al. The application of saturable turn-on snubbers to IGBT bridge-leg circuits[J]. IEEE Transactions on Power Electronics, 1991, 14(6): 1101-1110.
[13]
Kim I D, Nho E C, Bose B K. A new snubber circuit for multilevel inverter and converter[C]. IEEE Industry Applications Conference, 1998, 2: 1432- 1439.
