Hideki M, Hiyazaki, Hideshi F, Shigeru S, et al. Neutral-point-clamped inverter with parallel driving of IGBTs for industrial applications[J]. IEEE Transactions on Industry Applications, 2000, 36(1): 146-151.
[2]
Qiao Ermin, Wen Xuhui, Guo Xin. Development of high power intelligent module based on paralleled IGBTs[J]. Transactions of China Electrotechnical Society, 2006, 21(10): 90-93, 100.
Azar R, Udrea R, Wai Tang, et al. The current sharing optimization of paralleled IGBTs in a power module tile using a pspice frequency dependent impedance model[J]. IEEE Transactions on Power Electronics, 2008, 23(1): 206-217.
[5]
Hofer Noser, Karrer. Monitoring of paralleled IGBT/diode modules[J]. IEEE Transactions on Power Electronics, 1999, 4(3): 438-444.
[6]
Fink A, Torti R, Reinhardt N, et al. High-voltage IGBT switching arrays[J]. IEEE Transactions on Magnetics, 2009, 45(1): 282-287.
[7]
Sze M. Physics of Semiconductor Dvices[M]. New York: Murray Hill, 1981.
[8]
Wang R, Dunkley J, De Massa T, et al. Threshold voltage variations with temperature in MOS transistors[J]. IEEE Transactions on Electron Devices, 1971, 386-388.
[9]
Hu C, Chi M, Vikram P. Optimum design of power MOSFET’s[J]. IEEE Transactions on Electron Devices, 1984, 31(12): 1693-1700.
[10]
Kenneth B, David J B, Malcolm T. The optimization of on-resistance in vertical DMOS power devices with linear and hexagonal surface geometries[J]. IEEE Transactions on Electron Devices, 1984, 31(1): 75-80.
[11]
Xuesong Wang, Zhengming Zhao, Liqiang Yuan. Current sharing of IGBT modules in parallel with thermal imbalance[C]. IEEE Energy Conversion Congress and Exposition, 2010: 234-238.
Chen Na, He Xiangning, Deng Yan, et al. An off-line IGBT switching characteristics measurement system[J]. Proceedings of the CSEE, 2010, 30(12): 50-55.
Bai Hua, Zhao Zhengming, Hu Xian, et al. The experimental analysis of DC pre-excitation for 3-level inverter-motor system[J]. Proceedings of the CSEE, 2006, 26(3): 159-163
Zhao Hongtao, Wu Jun, Chang Wensen. Research on the feasibility of balancing on-state current for paralleled IGBTs by controlling gate voltage[J]. Power Electronics, 2007, 41(9): 101-103.
[18]
Hofer P, Karrer N, Gerster C. Paralleling intelligent IGBT power modules with active gate-controlled current balancing[C]. 27th IEEE Power Electronics Specialist Conference, 1996, 2: 1312-1316.
[19]
Dominik Bortis, Juergen Biela, Johann. Kolar. Active gate control for current balancing of parallel- connected IGBT modules in solid-state modulators[J]. IEEE Transactions on Plasma Science, 2008, 36(5): 2632-2637.
[20]
Romeo Letor. Static and dynamic behavior of paralleled IGBT’s[J]. IEEE Transactions on Industry Applications, 1992, 28(2): 395-402
[21]
Mohamed D, Kenneth B. Optimization of breakdown voltage and on-resistance of VDMOS transistors[J]. IEEE Transactions on Electron Devices, 1984, 31(12): 1769-1773.
Bai Hua, Zhao Zhengming. Research on starting strategies in the three-level high voltage high power inverters[J]. Transactions of China Electrotechnical Society, 2007, 22(11): 91-97.
