贺卫利, 郭伟玲, 高伟. 大功率发光二极管可靠性和寿命评价试验方法[J]. 应用光学, 2008, 29(4): 533-537. He Weili, Guo Weiling, Gao Wei. Test method of life-time and reliability evaluation for high power LED[J]. Journal of Applied Optics, 2008, 29(4): 533-537
[2]
范雪梅, 毕津顺, 刘梦新, 等. PD SOI MOSFET低频噪声研究进展[J]. 微电子学, 2008, 38(6): 817-825. Fan Xuemei, Bi Jinshun, Liu Mengxin, et al. An overview of low-Frequency noise in PD SOI MOSFET[J]. Micro-electronics, 2008, 38(6): 817-825.
[3]
Jevtie M M. Noise as a diagnostic and radiation tool in reliability Physics[J]. Micro electronics Reliability, 1995, 35(3): 455-477.
[4]
乐淑萍, 肖慧荣, 易江林. GaN 基白光LED电流加速老化特性研究[J]. 南昌航空工业学院学报(自然科学版), 2007, 21(1): 12-15. Le Shuping, Xiao Huirong, Yi Jianglin. Research into characteristics of the accelerated degradation GaN/ Al2O3 white LEDs[J]. Journal of Nanchang Institute of Aeronautical Technology( Natural Science), 2007, 21 (1): 12-15
[5]
胡瑾, 杜磊, 庄奕琪, 等. 发光二极管可靠性的噪声表征[J]. 物理学报, 2006, 55(3): 1386-1391. Hu Jin, Du Lei, Zhuang Yiqi, et al. Noise as a representation for reliability of light emitting diode[J]. ACTA Physica Sinica, 2006, 55(3): 1384-1389
[6]
Cao X A, Arthur S D. High-Power and reliable operation of vertical light-emitting diodes on bulk GaN[J]. Applied Physics Letter, 2004, 85(18): 3971-3973.
[7]
Egawa T, Ishikawa H, Jimbo T, et al. Optical degradation of InGaN/AIGaN light-emitting diode on sapphire substrate grown by metal organic chemical vapor deposition[J]. Applied Physics Letter, 1996, 69(6): 830-832.
[8]
Shono H. Estimation of light emitting diode's operation Life time[J]. IEIC Technical Report (Institute of Electronics, Information and Communication Engineers), 1999, 99(454): 13-18.
[9]
Sergey. L. Rumyantsev, ChristianWetzel, Michael.S. Shur. Wavelength Resolved low frequency noise of GaN/AlGaN green light emitting diodes[J]. Journal of Applied Physics, 2006, 100(8): 084506-1/4, 15.
[10]
Sawyer S., Sergey.L.Rumyanstev, N.Pala, et al. Noise chara- cteristics of 340 nm and 280 nm GaN-based light emitting diodes[J]. International Journal of High Speed Electronics and Systems, 2004, 14(3): 702-707.
[11]
Sergey. L. Rumyantsev, Michael. S. Shur. Low frequency noise and long-term stability of noncoherent light sources[J]. Journal of Applied Physics, 2004, 96(2): 966-970.
[12]
Potemkin V V, Yuo M Mamontov. Luminescence noise in two-band gap light emitting diodes[J]. Izvestiya Vysshikh Uchebnykh Zavedenii, Radio-fizika, 1982, 25(4): 334-337.
[13]
Tasko Endo, Eitaro Morimoto, Yutaka Hirayoshi, et al. Antirocorelated noise from parallely connected light emitting dioes[J]. Journal of the Physical Society of Japan, 1998, 67 (9): 3082-3085.
[14]
包军林, 庄奕琪, 杜磊, 等. GaAlAs红外发光二极管功率老化对其1/ f 噪声特性的影响[J]. 红外与毫米波学报, 2006, 25(1): 33-36. Bao Junlin, Zhuang Yiqi, Du Lei, et al. Effectsof Power of Aging on 1/f Noise Characteristics for GaAlAs IR LED[J]. J. Infrared Millim. Waves, 2006, 25(1): 33-36.
[15]
戴逸松. 低频噪声测量技术的现状及最新进展[J]. 计量学报, 1994, 15(4): 314-319. Dai Yisong. The Current Situation and Recent Development on Low Frequency Noise Measurement Technique[J]. Acta Metrologica Sinica, 1994, 15(4): 314-319.
[16]
刀戈木. 影响InGaAsP/InP LD和LED的寿命因素[J]. 半导体光电, 1986(4): 65-68. Dao Gemu. Factors Impacting life on InGaAsP / InP LD and LED[J]. Semiconductor optoelectronics, 1986(4): 65-68.
[17]
Sergey L Rumyantsev, Sawyer S, Michael S Shur. Low- frequency noise of GaN-based ultraviolet light emitting diodes[J]. Journal of Applied Physics, 2005, 97(123107): 1-5.
[18]
Šaulys B, Matukas J, Palenskis V, et al. Light-emitting diode degradation and low frequency noise characteristics[J]. ACTA Physica Polonica A, 2011, 199(4): 514-520.
[19]
Kang T, Park J, Lee J K. Random telegraph noise in GaN-basedlight-emitting diodes[J]. Electronics Letters, 2011, 47(15): 873-875.
[20]
Lin Ke, Xin Yue Zhao, Ramadas Senthil Kumar, et al. Low frequency optical noise from organic light emitting diode[J]. Solid-State Electronics, 2008 (52): 7-10.
