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短导体对水平接地极冲击特性的影响

, PP. 177-185

Keywords: 短导体,接地极,冲击特性,屏蔽效应,时域差分,有限元法

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Abstract:

冲击接地实验研究表明,在放射状的水平接地极上合适位置添加短导体后能使接地极周围的时变电场趋于均匀分布。本文针对短导体的布置方式展开研究,采用时域差分思想和多物理场有限元分析相结合的仿真方法,以单根水平接地极和添加短导体后的水平接地极为研究对象,从屏蔽效应强弱的角度分析了7种结构接地极的冲击特性。结果表明在水平接地极上布置短导体时存在弱屏蔽区域,在弱屏蔽区域之外短导体受端部作用影响较大;同种短导体结构接地极的屏蔽效应随着注入电流幅值的增加而增大;在短导体长度与接地极的长度比为1/30的情况下,短导体间距与接地极长度的比例在10%~15%之间时较其他结构的接地极中部散流值比例较大,屏蔽作用较弱。

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