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基于衬底偏置的超低耗电流复用混频器

, PP. 531-534

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Abstract:

基于SMIC0.18μm1P6MCMOS工艺,设计实现了一种工作在0.6V超低电源电压下的混频器.该混频器跨导级采用自偏置的互补跨导结构,并与开关级构成折叠结构,大大降低了电源电压;电路中所有的MOS管衬底均加有固定偏置电压,减小了MOS管的阈值电压,实现了超低电压超低功耗的设计;并采用电流复用技术,改善了电路的噪声性能,并提高了其转换增益和线性度.该混频器核心电路尺寸为460μm×400μm,当射频信号、本振信号和中频信号分别为1575MHz,1400MHz和175MHz时,仿真表明,该混频器转换增益(Gc)为6.1dB,双边带噪声系数为14dB,输入1dB压缩点为-16.67dBm,在0.6V的电源电压条件下,功耗仅为0.76mW,可用于航空航天领域的电子系统中.

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