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电子照射对硅漂移探测器性能的影响

, PP. 235-238

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Abstract:

由于高能电子辐射的长期照射,新一代太阳X射线探测器硅漂移传感器的探测性能可能发生变化.通过用电子放射源模拟空间电子对硅漂移探测器进行辐射照射试验,以测试电子照射对传感器能量分辨率、效率、信号幅度等性能的影响.试验结果表明,长期的电子照射造成硅漂移探测器面损伤和体损伤,使其漏电流增大,信号幅度减小,能量分辨率也受到照射的影响,而探测效率未发生变化.

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