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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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高压下的Ge和Si的相变
DOI: 10.11858/gywlxb.1987.01.006, PP. 39-49
Keywords: 锗和硅,赝势理论,高压相变,超导电性
Abstract:
本文采用赝势方法研究Ⅳ族元素Ge和Si宰高压下的共价键－金属相相变，计算了状态方程、相平衡压力、体积跃变量及其金属相的超导临界温度。结果表明，理论与实验符合都比较好。
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