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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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等离子体CVD生长金刚石薄膜中衬底负偏压增强成核机制
DOI: 10.11858/gywlxb.1996.02.006, PP. 114-121
Keywords: 等离子体,金刚石薄膜,成核
Abstract:
提出了近年来实验发现的在等离子体化学气相沉积（PCVD）金刚石薄膜中衬底负偏压增强成核效应的理论模型，给出了偏压增强成核效应与沉积参数诸如反应压强和碳源浓度等的关系，解释了在负偏压增大时，反应压强和碳源浓度的变化对成核增强强度的影响，并且讨论了阈值负偏压问题。本模型得到的理论结果与文献中的实验结果基本一致。
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