Nelmes R J, Memahon M I, Wright N G, et al. Structural Studies ofⅡ-Ⅵ Semiconductors at High Pressure [J]. J Phys Chem Solids, 1995, 56(3/4): 545-549.
[3]
Werner A, Hochheimer H D, Stnissner K, et al. High Pressure X-Ray Diffraction Studies on HgTe and HgS to 20 GPa [J]. Phys Rev B, 1983, 28(6): 3330-3334.