全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

锂基触媒体系中不同形状立方氮化硼晶体的高压合成

DOI: 10.11858/gywlxb.2010.03.013, PP. 237-240

Keywords: 立方氮化硼(cBN),触媒/添加剂,晶体形状

Full-Text   Cite this paper   Add to My Lib

Abstract:

采用高温高压方法,以六角氮化硼(hBN)为原料、选用氮化锂(Li3N)、氢化锂+氮化锂(LiH+Li3N)、氢化锂(LiH)、氢化锂+氨基锂(LiH+LiNH2)、氮化锂+氨基锂(Li3N+LiNH2)为触媒,在合适的温度、压力及生长工艺条件下,分别得到了厚板状、类球形、八面体或六八面体、扁锥状和片状六边形形貌立方氮化硼(cBN)晶体。总结了不同锂基触媒/添加剂对合成的cBN晶体形貌变化的影响。

References

[1]  Wentorf R H. Sythesis of the Cubic Form of Boron Nitride [J]. J Chem Phys, 1961, 34: 809-812.
[2]  McKenzie D R, Sainty W G, Green D. The Microstructure of Boron Nitride Thin Films [J]. Mater Sci Forum, 1990, (54-55): 193-206.
[3]  Davis R F. Ⅲ-Ⅴ Nitrides for Electronic and Optoelectronic Applications [J]. Proc IEEE, 1991, 79: 702-712
[4]  Sichuan Cubic Boron Nitride Co-op. Group. The Synthesis of Cubic Boron Nitride under High Pressures and Temperatures [J]. Acta Phys Sin, 1976, 25(1): 1-9. (in Chinese)
[5]  四川省立方氮化硼协作组. 高温高压下立方氮化硼的合成 [J]. 物理学报, 1976, 25(1): 1-9.
[6]  Demazeau G. Growth of Cubic Boron Nitride by Chemical Vapor Deposition and High-Pressure High-Temperature Synthesis [J]. Diamond Relat Mater, 1993, 2: 197-200.
[7]  Sumiya H, Iseki T, Onodera A. High Pressure Synthesis of Cubic Boron Nitride from Amorphous State [J]. Mater Res Bull, 1983, 18: 1203-1207.
[8]  Stockel S, Weise K, Dietrich D, et al. Influence of Composition and Structure on the Mechanical Properties of BCN Coatings Deposited by Thermal CVD [J]. Thin Solid Films, 2002, 420-421: 465-471.
[9]  Deng J X, Wang X Y, Yao Q, et al. Optical Band Gap of Cubic Boron Nitride Thin Films Deposited by Sputtering [J]. Acta Phys Sin, 2008, 57: 6631-6635. (in Chinese)
[10]  邓金祥, 汪旭洋, 姚倩, 等. 立方氮化硼薄膜的光学带隙 [J]. 物理学报, 2008, 57: 6631-6635.
[11]  Wentorf R H. Preparation of Semiconducting Cubic Boron Nitride [J]. J Chem Phys, 1962, 36: 1990-1991.
[12]  Vel L, Demazeau G, Etourneau J. Cubic Boron Nitride: Synthesis, Physicochemical Properties and Applications [J]. Mater Sci Eng B, 1991, 10: 149-164.
[13]  Mishima O, Tanaka J, Yamaoka S, et al. High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure [J]. Science, 1987, 238: 181-183.
[14]  Edgar J H. Properties of Group Ⅲ Nitride [M]. London: INSPEC, 1994: 7.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133