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高压高温下B2O3与Mg和Li3N的反应

DOI: 10.11858/gywlxb.2006.03.009, PP. 277-280

Keywords: 触媒,B2O3,立方氮化硼

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Abstract:

通过B2O3与Mg和Li3N分别在不同温度压力条件下的反应,用X射线方法研究了生成物的物相。当采用Mg与B2O3为原料时,其产物是Mg3B2O6;用Li3N与B2O3反应时,产物中除了Li3BO3,还有立方氮化硼(cBN)生成。这表明,当原料中含有相同数量B2O3时,用Mg和Li3N分别作触媒合成立方氮化硼,将得到不同的结果。

References

[1]  Wentorf R H. Sythesis of the Cubic Form of Boron Nitride [J]. J Chem phys, 1961, 34: 809.
[2]  Mishima O, Tanaka J, Yamaoka S, et al. High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure [J]. Science, 1987, 238: 181-183.
[3]  Tomikawa T, Nishibayashi Y, Shikata S. P-N Junction Diode by B-Doped Diamond Heteroepitaxially Grown on Si-Doped c-BN [J]. Diamond and Relat Mater, 1994, 3: 1398.
[4]  Zhang T Ch, Wang Ch X, Gao Ch X. Cubic Boron Nitride Crystal-Diamond Film Heterojunction P-N Diode [J]. Chinese Journal of High Pressure Physics, 1999, 13(3): 169. (in Chinese)
[5]  张铁臣, 王成新, 高春晓. 立方氮化硼单晶-金刚石膜异质P-N结 [J]. 高压物理学报, 1999, 13(3): 169.
[6]  Bello I, Chong Y M, Leung K M, et al. Cubic Boron Nitride Films for Industrial Applications [J]. Diamond Relat Mater, 2005, 14: 1784-1790.
[7]  Sato T, Hiraok H, Endo T. Effect of Oxygen on the Growth of Cubic Boron Nitride Using Mg3N2 as Catalyst [J]. J Materials Sci, 1981, 16: 2227.
[8]  Singal S K, Park J K. Synthesis of Cubic Boron Nitride from Amorphous Boron Nitride Containing Oxide Impurity Using Mg-Al Alloy Catalyst Solvent [J]. J Crystal Growth, 2004, 260: 217-557.

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