The effect of anode emitter injection capability on characteristics of hybrid SIT-MOS transistors

The possibility of optimization of high voltage hybrid SIT-MOS transistors (HSMT) by local reduction of the lifetime near anode emitter and/or reduction of the anode emitter injection ability by three different ways has been investigated using two-dimensional numerical simulation. It has been shown that all of these methods proposed previously for optimization of insulated-gate bipolar transistor (IGBT) are physically equivalent and makes it possible to reduce turn-off energy losses $E_{off}$ in HSMT by 30-40%. Importantly that energy $E_{off}$ in optimized HSMT appears to be 15-35% less than in equivalent trench IGBT under other equal conditions.