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Material Sciences 2014
多晶硅定向凝固铸锭炉热场改进数值模拟研究
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Abstract:
[1] | Hering, G. (2011) Year of the tiger. Photon International, 3, 186-218. |
[2] | Fujiwara, K., Pan, W., Sawada, K., Tokairin, M., Usami, N., Nose, Y., Nomura, A., Shishido, T. and Nakajima, K. (2006) Directional growth method to obtain high quality polycrystalline silicon from its melt. Journal of Crystal Growth, 292, 282-285. |
[3] | Wang, H.Y., Usami, N., Fujiwara, K., Kutsukake, K. and Nakajima, K. (2009) Microstructures of Si multicrystals and their impact on minority carrier diffusion length. Acta Materialia, 57, 3268-3276. |
[4] | Lan, C.W., Lan, W.C., Lee, T.F., Yu, A., Yang, Y.M., Hsu, W.C., Hsu, B. and Yang, A. (2012) Grain control in directional solidification of photovoltaic silicon. Journal of Crystal Growth, 360, 68-75. |
[5] | Zhang, Z.Q. and Huang, Z.F. (2011) Analysis of microcrystal formation in DS-silicon ingot. Science China Technological Sciences, 54, 1475-1480. |
[6] | Wu, B., Stoddard, N., Ma, R.H. and Clark, R. (2008) Bulk multi-crystalline silicon growth for photovoltaic (PV) application. Journal of Crystal Growth, 310, 2178-2184. |
[7] | Teng, Y.Y., Chen, J.C., Lu, C.W. and Chen, C.Y. (2010) The carbon distribution in multi-crystalline silicon ingot growth using directional solidification process. Journal of Crystal Growth, 312, 1282-1290. |
[8] | Steinbach, I., Apel, M., Rettebach, T. and Frank, D. (2002) Numerical simulations for silicon crys-tallization pro- cesses-examples from ingot and ribbon casting. Solar Energy Material and Solar Cells, 72, 59-68. |
[9] | Wu, B., Scott, S., Stoddard, N., Clark, R. and Sholapurwalla, A. (2009) Simulation of silicon casting process for photovoltaic application. Proceeding of the 2009 TMS Annual Meeting & Exhibition, 12-19. |
[10] | Teng, Y.Y., Chen, J.C., Lu, C.W., Chen, H.I., Hsu, C. and Chen, C.Y. (2011) Effect of the furnace pressure on oxygen and silicon oxide distributions during the growth of multi-crystalline silicon ingots by the directional solidification process. Journal of Crystal Growth, 318, 224-229. |
[11] | Teng, Y.Y., Chen, J.C., Lu, C.W. and Chen, C.Y. (2012) Numerical investigation of oxygen impurity distribution during multicrystalline silicon crystal growth using gas flow guidance device. Journal of Crystal Growth, 360, 12-17. |
[12] | Teng, Y.Y., Chen, J.C., Huang, B.S. and Chang, C.H. (2014) Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multi-crystalline silicon ingots by the directional solidification process. Journal of Crystal Growth, 385, 1-8. |
[13] | Ding, C.L., Huang, M.L., Zhong, G.X., Ming, L. and Huang, X.M. (2014) A design of crucible susceptor for the seeds preservation during a seeded directional solidification process. Journal of Crystal Growth, 387, 73-80. |
[14] | Black, A., Medina, J., Pineiro, A. and Dieguez. E. (2012) Optimizing seeded casting of mono-like silicon crystals through numerical simulation. Journal of Crystal Growth, 353, 12-16. |
[15] | Li, Z.Y., Zhang, Y.F., Hu, Z.Y., Zhou, G.S. and Liu, L.J. (2014) Numerical investigation of the effect of a crucible cover on crystal growth in the industry directional solidification process for silicon ingots. Journal of Crystal Growth, 401, 291-295. |
[16] | Demina, S.E., Bystrova, E.N., Lukanina, M.A., Mamedov, V.M., Yuferev, V.S., Eskov, E.V., Nikolenko, M.V., Postolov, V.S. and Kalaev, V.V. (2007) Numerical analysis of sapphire crystal growth by the Kyropoulos technique. Optical Materials, 30, 62-65. |
[17] | Miyagawa, C., Kobayashi, T., Taishi, T. and Hoshikawa, K. (2014) Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation. Journal of Crystal Growth, 402, 83-89. |
[18] | Li, J.Q., Su, X.P., Na, M., Yang, H., Li, J.M., Yu, Y.N. and Mi, J.J. (2006) Influence of gas flow on thermal field and stress during growth of sapphire single crystal using Kyropoulos method. Rare Metals, 25, 260-266. |
[19] | Su, W.J. Zuo, R., Mazaev, K. and Kalaev, V. (2010) Optimization of crystal growth by changes of flow guide, radiation shield and shidewall insulation in Cz Si furnace. Journal of Crystal Growth, 312, 495-501. |
[20] | Su, W.J., Zuo, R., Lu, J.G., Di, C.Y. and X.N. Cheng. (2014) Numerical and experimental studies on the Black Periphery Wafer in Cz Si growth. Journal of Crystal Growth, 388, 42-47. |
[21] | Smirnova, O.V., Durnev, N.V., Shandrakova, K.E., Mizitov, E.L. and Soklakov, V.D. (2008) Optimization of furnace design and growth parameters for Si Cz growth, using numerical simulation. Journal of Crystal Growth, 310, 2185- 2191. |
[22] | Chen, J.C., Guo, P.C., Chang, C.H., Teng, Y.Y., Hsu, C., Wang, H.M. and Liu, C.C. (2014) Numerical simulation of oxygen transport during the Czochralski silicon crystal growth with a cusp magnetic field. Journal of Crystal Growth, 401, 888-894. |
[23] | Kullevm, A.T., Dumev, N.V. and Kalaev, V.V. (2007) Analysis of 3D unsteady melt flow and crystallization front ge- ometry during a casting process for silicon solar cell. Journal of Crystal Growth, 303, 236-240. |
[24] | (2010) CGSIMTM, Flow Module, Ver. 3.11, Theory Manual. Semiconductor Technology Research, Inc.
http://www.semitech.us/ |
[25] | (2008) STR GROUP, CGSIM MATERIAL data base, v.8.12 [DB\CD]. ST. Petersburg, Richmond.
http://www.semitech.us/ |
[26] | 姚连增 (1995) 晶体生长基础. 中国科学与技术大学出版社, 合肥, 247-249. |